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High Voltage Trench Junction Barrier Schottky Diode

一种肖特基二极管、肖特基接触的技术，应用在半导体器件、电气元件、电路等方向

Active Publication Date: 2017-03-22
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the minority carriers have to be removed again at turn-off with a detrimental effect on the switching time

Method used

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  • High Voltage Trench Junction Barrier Schottky Diode
  • High Voltage Trench Junction Barrier Schottky Diode
  • High Voltage Trench Junction Barrier Schottky Diode

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Embodiment Construction

[0022] figure 2 A sketch for explaining a Schottky diode according to the invention is shown. This Schottky diode, which is preferably realized in chip form, is also referred to below as a high-voltage trench junction barrier Schottky diode or HV-TJBS.

[0023] figure 2 The HV-TJBS shown in has n + Substrate 10, n-epitaxial layer 20, trench (Trench) 70 carved into n-epitaxial layer 20, metal layer 50 as anode electrode on chip front side V, and metal layer 60 as cathode electrode on chip backside R . Trench 70 is filled with highly p-doped silicon or polysilicon 40a. The metal layers 50 and 60 can also consist of two or more different metal layers placed on top of each other. For clarity, this is in figure 2 not drawn in. From an electrical point of view, HV-TJBS is a trench PN diode (the PN junction between the p-doped trench 70 as the anode and the n epitaxial layer 20 as the cathode) and a Schottky diode (the metal layer 50 as the anode and the combination of a S...

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Abstract

The invention relates to a Schottky diode having: an n+ substrate; an n epitaxial layer; at least two p-doped trenches inserted into the n epitaxial layer; a mesa region between adjacent trenches; a metal layer serving as a cathode electrode; and an additional metal layer serving as an anode electrode. The thickness of the epitaxial layer is greater than four times the depth of the trench.

Description

technical field [0001] The invention relates to a Schottky diode which is suitable for high voltage applications and which additionally has a low forward voltage, low leakage current, has no switching losses and is highly robust. Background technique [0002] High voltage PN diodes are typically used for high voltage applications. Such high voltage PN diodes advantageously have low leakage currents and high robustness. A disadvantage of such high voltage PN diodes is that they have a high forward voltage and high switching losses. [0003] In such high-voltage PN diodes, the voltage is mainly taken up by the weakly doped regions provided in such diodes. In the case of running in the flow direction, electrons and holes are injected into weakly doped regions. In the case of high current density, high injection dominates in the weakly doped region, and the electron and hole density is higher than the doping concentration of the weakly doped region. This increases the conduc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/872
CPCH01L29/861H01L29/872H01L29/0634H01L29/47H01L29/8725
Inventor N.屈A.格拉赫
Owner ROBERT BOSCH GMBH
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