Manufacturing method for broadband THz wave absorber unrelated to wide-angle polarization

Abstract

The invention relates to a manufacturing method for a broadband THz wave absorber unrelated to wide-angle polarization. The manufacturing method includes that semiconductor silicon with certain doping concentration is selected, a photolithography technique and an ICP (inductively coupled plasma) technique etching or a chemical corrosion technique are adopted on the surface of a silicon wafer to obtain periodically arranged grating layers with reduced reflectivity, and the rest part of the grating layers is a substrate layer with reduced transmissivity. By the arrangement, broadband absorber unrelated to the wide-angle polarization is realized in a THz band. Compared with a conventional metamaterial absorber, the high-doping silicon substrate absorber with the two-dimensional grating structure has the advantages of high absorption frequency band, unrelated to polarization, wide in incident angle and the like; the manufacturing method of the absorber is wide in material taking, simple and efficient, convenient to manufacture and wide in application range; the broadband THz absorber unrelated to the polarization can be manufactured according to actual application scenarios and demands, and absorption rate, absorption frequency band and absorption broadband can be regulated through regulation of structural parameters.

Description

technical field [0001] The invention relates to a terahertz wave absorber, in particular to a manufacturing method of a wide-angle polarization-independent broadband terahertz wave absorber. Background technique [0002] Terahertz (THz) waves are electromagnetic waves that lie between microwaves and far infrared rays. In recent years, with the development of ultrafast laser technology, the generation of terahertz pulses has a stable and reliable excitation light source, which has enabled people to study terahertz. Terahertz has a wide range of applications in biomedicine, safety monitoring, non-destructive detection, spectroscopy and imaging technology, and military radar. The development and utilization of terahertz bands are inseparable from terahertz functional devices. Terahertz absorbers are a basic functional device for terahertz applications and can be widely used in microbolometers, detectors, spectral imaging, stealth etc. Its development has always been paid att...

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem that the current terahertz absorber has a small range of high absorptivity, and proposes a wide-angle polarization-independent manufacturing method for a broadband terahertz wave absorber. The two-dimensional grating structure can effectively solve the problem of absorptivity and incident wave polarization. State-independent, broadband high absorption is achieved by the superposition of destructive interference and grating diffraction

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