led chip and its growth method

A technology of LED chip and growth method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high leakage rate of LED chips and low product appearance yield, and achieve the improvement of appearance yield, leakage yield, and improvement The effect of adhesion

Active Publication Date: 2017-06-16
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide an LED chip and its growth method to solve the technical problems of high leakage rate and low product appearance yield in the prior art.

Method used

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  • led chip and its growth method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] 1. Thoroughly clean the epitaxial wafer, which is an epitaxial wafer with a GaN-based light-emitting diode chip structure grown on a PSS sapphire substrate;

[0063] 2. After cleaning, the ohmic contact layer is deposited by electron beam evaporation, wherein the material of the ohmic contact layer is indium tin oxide (ITO), and the coating rate is Thickness is

[0064] 3. Exposing the P-GaN through photolithography, wet etching and other steps. The etching solution is ITO etching solution, the temperature is 60-70°C, and the etching time is 4-5 minutes;

[0065] 4. Using steps such as inductive couple and plasma (ICP) etching, glue removal and cleaning, etc., to manufacture the mesa of the light-emitting area of ​​a single core particle, exposing the N-type GaN layer 2 and the groove;

[0066] 5. Corrode the Wafer that has not been glued in step 4 as ITO to prevent leakage. The etching solution is ITO etching solution, the temperature is 60°C, and the etching tim...

Embodiment 2

[0077] 1. Thoroughly clean the epitaxial wafer, which is an epitaxial wafer with a GaN-based light-emitting diode chip structure grown on a PSS sapphire substrate;

[0078] 2. Using inductive couple and plasma (ICP) etching, glue removal and cleaning to manufacture the mesa of the light-emitting area of ​​a single core particle, exposing the N-type GaN layer and groove;

[0079] 3. After cleaning, use electron beam evaporation to deposit a transparent conductive layer, wherein the material of the transparent conductive layer is indium tin oxide (ITO);

[0080] 4. Perform high-temperature annealing on Wafer to form a good ohmic contact between ITO and P-GaN, and at the same time, ITO is denser and has better conductivity. The annealing method is furnace tube annealing, the temperature is 500°C, and the time is 10 minutes;

[0081] 5. Make P-type electrodes and N-type electrodes by means of negative photolithography, sweeping, deposition, and stripping. The materials of P and N...

Embodiment 3

[0086] 1. Thoroughly clean the epitaxial wafer, which is an epitaxial wafer with a GaN-based light-emitting diode chip structure grown on a PSS sapphire substrate;

[0087] 2. After cleaning, the magnetron sputtering method (Sputter) is used to deposit the ohmic contact layer, wherein the material of the ohmic contact layer 100 is indium tin oxide (ITO), and the coating rate is Thickness is

[0088] 3. Exposing the P-GaN through photolithography, wet etching and other steps. The etching solution is ITO etching solution, the temperature is 70°C, and the etching time is 1 minute;

[0089] 4. Using steps such as inductive couple and plasma (ICP) etching, glue removal and cleaning, etc., to manufacture the mesa of the light-emitting area of ​​a single core particle, exposing the N-type GaN layer 2 and the groove;

[0090] 5. Corrode the Wafer that has not been glued in step 4 as ITO to prevent leakage. The etching solution is ITO etching solution, the temperature is 60-70°C,...

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Abstract

The invention provides an LED chip and a growing method of the LED chip. The LED chip comprises a metal layer and an insulating layer, wherein the metal layer and the insulating layer are overlaid. The LED chip further comprises an adhesion layer. The adhesion layer is arranged between the metal layer and the insulating layer and is a material layer containing Ni or a material layer containing Ti. The adhesion layer made of materials of Ni or Ti is additionally arranged between the metal layer and the insulating layer of the LED chip so that adhesive power between the meta layer and the insulating layer can be improved. The electric leakage yield of semiconductor products is improved to more than 98 percent, and the appearance yield is improved to more than 99 percent.

Description

technical field [0001] The invention relates to the field of LED chips, in particular, to an LED chip and a growth method thereof. Background technique [0002] LED (LightEmittingDiode, light-emitting diode) chip is a solid-state semiconductor device that can directly convert electricity into light. [0003] At present, commonly used LED chips mainly include flip-chip and front-mount structures. The electrodes of the positive-mounted LED chip are located on the light-emitting surface of the chip. About 30% of the light is absorbed by the P electrode, and due to the limited electrical conductivity of the P-GaN layer, it is required to deposit a metal layer on the surface of the P-GaN layer to promote current diffusion. This metal layer of current diffusion will block part of the light, thereby reducing the light extraction efficiency of the chip. [0004] The flip-chip LED chip was invented by the American Lumileds company. Weld several BUMPs (gold balls) on the electrode...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/40H01L33/62
CPCH01L33/40H01L2933/0016
Inventor 田艳红许顺成马欢
Owner XIANGNENG HUALEI OPTOELECTRONICS
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