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51results about How to "Improve appearance yield" patented technology

Method for cutting sapphire substrate LED chip through lasers

According to a method for cutting a sapphire substrate LED chip through lasers, a paddle with the depth being 20-40 [mu]m is cut in the face, with an electrode, of a wafer through an ultraviolet laserwafer scriber; and modified layers are formed in the mode that an invisible laser wafer scriber is utilized to act on the interior of the wafer, that is, the different modified layers are formed in the mode that the lasers are focused on the positions, with different depths, of the wafer through adjustment of the laser focus depth of the invisible laser wafer scriber, and cracks generated throughstress releasing of the modified layers can be connected together. The sapphire substrate wafer machined through the method is cleaved in the direction of the cracks through a piece cleavage machine,so that the sapphire substrate wafer is cut into independent light emitting units, and thus, cutting is completed. According to the method for cutting the sapphire substrate LED chip through the lasers, the sapphire substrate wafer with the large thickness and size is cut, the cutting yield of the sapphire substrate wafer can be effectively increased, the cut chip is prevented from generating thephenomena of crystal twin, edge breakage and oblique cracking, and the appearance yield rate of the cut chip is effectively increased.
Owner:SHANDONG INSPUR HUAGUANG OPTOELECTRONICS

Display module, manufacturing method thereof and display device

The invention provides a display module, a manufacturing method thereof and a display device. The display module comprises a substrate, a display function layer, a supporting layer, a buffer layer and a first bonding layer. The substrate comprises a display section, a bending section and an extension section; the supporting layer is arranged on one side, far away from the display function layer, of the substrate, and comprises a first supporting layer arranged close to the extension section and a second supporting layer arranged on the display section; the buffer layer is arranged on one side, deviating from the substrate, of the second supporting layer; the first bonding layer is arranged between the first supporting layer and the buffer layer; and the distance from one end, far away from the non-display area, of the first bonding layer to the non-display area is larger than or equal to the distance from one end, far away from the non-display area, of the buffer layer to the non-display area. The technical problem that the appearance of a display module product is affected due to the fact that a buffer layer is excessively thinned in order to achieve a narrow frame effect in an existing terminal bending process, so that a bonding layer on the display module is impressed obviously is solved.
Owner:WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Light-emitting diode device and preparation method thereof

The invention discloses a light-emitting diode device and a preparation method thereof, which are not only suitable for light-emitting diode devices with a vertical structure, but also for other series of light-emitting diode devices such as a horizontal structure and a high-voltage structure. The light emitting diode device includes a substrate and a plurality of mesa structures located on the upper surface of the substrate. The mesa structure includes a light emitting diode mesa located in a light emitting area and a cutting area mesa located in a cutting area. The light emitting diode mesaand the cutting area mesa are arranged at intervals, and the cutting area Including the cutting channel and the spacer area, the reflective metal layer, the sacrificial layer and the first insulatinglayer inside the cutting channel are distributed in a trapezoid shape. This trapezoidal distribution method effectively improves the continuous direction of the stress at the cutting channel and reduces the continuous accumulation of stress Therefore, the stress lines and the abnormalities of easy peeling and falling off of the semiconductor epitaxial layer are reduced or eliminated, and the appearance yield of the light emitting diode device can be effectively improved, and the product quality of the light emitting diode device can be improved.
Owner:XIAMEN SANAN OPTOELECTRONICS TECH CO LTD

Method for improving manufacturing yield of LED chip

The invention discloses a method for improving the manufacturing yield of an LED chip. The method comprises the steps: firstly carrying out the growth of a wafer epitaxial layer, then carrying out thecorrosion of a second highly-doped pGaP window layer to form an exposed region, and then depositing an oxide film; and then evaporating an ITO film on the surface of the epitaxial layer, continuouslymanufacturing a P-surface electrode and an N-surface electrode, finally evaporating a protective film on the surface of the P-surface electrode, then performing cutting, ultrasonically removing the protective film through hot water after cutting, and finally cleaning and expanding the film of the chip to form independent single core particles. According to the method, preparation of the LED chipis effectively achieved, the light-emitting effect of the chip is improved, MgF2/CaF2 films alternately grow on the surface of the wafer, the light-emitting surface is smooth, the problems that in thecutting process, a diamond knife makes direct contact with an ITO film, and corner breakage, cracks and the like are likely to be generated are solved, the product quality and reliability are greatlyimproved, chippings and water stain and dirt residues in the cutting process are avoided, the product appearance yield is increased, and high practicability is achieved.
Owner:SHANDONG INSPUR HUAGUANG OPTOELECTRONICS

High-flatness soft package lithium ion battery and preparation method thereof

The invention belongs to the technical field of soft package lithium ion batteries, and particularly relates to a high-flatness soft package lithium ion battery and a preparation method thereof. The preparation method comprises the steps that a positive plate, a diaphragm and a negative plate are subjected to Z-shaped lamination and tab welding, and a bare battery cell is obtained; the upper surface and the lower surface of the bare battery cell are respectively provided with a plastic partition plate, the length and the width of each plastic partition plate are 1 to 2 mm smaller than those ofthe bare battery cell, the thickness of each plastic partition plate is 0.5to 1 mm, the chamfer of each plastic partition plate is 1.5 to 2 mm, and the surfaces of the plastic partition plates are provided with net-shaped gaps and are uniformly distributed; and the bare battery cell with the plastic partition plates is put into an aluminum-plastic film, top side sealing, liquid injecting, formingand capacity grading are carried out to acquire the high-flatness soft package lithium ion battery. According to the invention, the flatness of the battery cell can be improved, and high flatness canbe permanently maintained; and the method has the advantages of simplicity and convenience in operation, low cost, easiness in large-scale production, improvement of the appearance yield of the battery cell, great reduction of the production cost and the like.
Owner:TIANNENG SAFT ENERGY JOINT CO

Clearance groove machining method and 3D substrate product

The invention discloses a clearance groove machining method, a 3D substrate product clearance groove machining method and a 3D substrate product. The clearance groove machining method comprises the following steps that the length D1 of the long side of a product to be machined and the width D2 of the short side of the product to be machined are detected, the center point and the center line of the product to be machined are fitted according to the length D1 and the width D2, a CNC rough cutting curve is fitted according to d2, d2 = d1 + sigma, d1 is the distance between the groove long side of an L-shaped clearance groove and the center line, and sigma is tolerance; and the distance d4 between the long side of the L-shaped clearance groove roughly cut according to the rough cutting curve and the long side of the 3D product is detected, the allowance d needing fine trimming is calculated, a CNC fine cutting curve is fitted according to the allowance d, and the L-shaped clearance groove is cut according to the CNC fine cutting curve. According to the clearance groove machining method, the two-time CNC tool connecting position accuracy during CNC machining can be achieved, the tool connecting mark proportion is close to 0%, and the product appearance yield is increased.
Owner:WEIDALI IND CHIBI CO LTD +1

Processing method of chip after laser cutting

The invention discloses a processing method of a chip after laser cutting. The method comprises the steps of: performing laser cutting and wafer expanding processing on a chip to form a plurality of independent chips, soaking the chips in a surfactant solution for a period of time, removing the chips from the surfactant solution, soaking the chips in an etching solution, etching a burning melt onthe edges of the chips through the etching solution, cleaning the etched chips, removing the residual etching solution on the surfaces of the etched chips, and drying the cleaned chips. After the chipis subjected to laser cutting and before the chip is etched, the surface active agent is adopted to improve the wettability of the surface of the chip, so that on one hand, burnt and melted particlesare prevented from being stuck back to the surface of the chip in the etching process; and on the other hand, the burnt and melted material particles are prevented from being attached to the surfaceof the chip in the process of conveying the etched chip to the cleaning link, so that the condition that the burnt and melted material particles stay on the surface of the chip in the subsequent etching and cleaning process is improved, and the appearance yield of products is improved.
Owner:XIAMEN SANAN INTEGRATED CIRCUIT
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