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Light emitting diode and manufacturing method

A technology of light-emitting diodes and electrodes, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of easy adsorption of glue gas on the surface of the chip, poor adhesion and compactness, and damage to semiconductor epitaxial stacks, so as to improve the appearance yield , Improve reliability, improve the effect of photoelectric performance

Active Publication Date: 2021-12-31
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the poor adhesion and compactness of the prepared silicon nitride layer, the electrode and light-emitting area of ​​the chip cannot be well covered, and the strong acid solution will penetrate through the surface silicon nitride layer and transparent conductive layer. , will cause damage to the semiconductor epitaxial stack, affect the appearance yield and photoelectric performance of the light-emitting diode, and, because the silicon nitride layer deposited on the surface needs to be removed with a solution such as hydrofluoric acid, it will leave part of the surface of the chip containing The fluorine chemical bond causes the surface of the chip to easily absorb glue gas, which affects the wire bonding effect of the chip

Method used

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  • Light emitting diode and manufacturing method
  • Light emitting diode and manufacturing method
  • Light emitting diode and manufacturing method

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Embodiment 1

[0053] The present invention provides a light emitting diode as follows, such as Figure 4 The schematic cross-sectional view includes the following stacked layers: 100: substrate; 1: semiconductor epitaxial stack; 110: first conductivity type semiconductor layer; 120: active layer; 130: second conductivity type semiconductor layer; 140: 150: the first electrode; 160: the second electrode; S1: the first surface of the substrate; S2: the second surface of the substrate; 190: an etching stopper layer.

[0054] The details of each structural stack layer are described below.

[0055] The substrate 100 is used for epitaxial growth. In this embodiment, a commonly used GaAs substrate is preferred. It should be noted that the substrate 100 is not limited to GaAs, and other materials such as GaP and InP may also be used.

[0056] In the present embodiment, a commercially available single crystal substrate manufactured by a known manufacturing method can be used as the GaAs substrate 1...

Embodiment 2

[0076] In order to improve the lattice quality of the semiconductor epitaxial stack 1 and the etching barrier layer 190, reduce the lattice mismatch between the semiconductor epitaxial stack 1 and the etching barrier layer 190, in the semiconductor epitaxial stack 1 and the etching barrier layer 190 Add an intermediate layer 200 between them, such as Figure 5 As shown, the lattice constant of the intermediate layer 200 is between those of the semiconductor epitaxial stack 1 and the etching stopper layer 190 .

[0077] In some embodiments, the material of the intermediate layer 200 is preferably GaInP, and the thickness of the intermediate layer is in the range of 20-50 nm. By adding the intermediate layer 200, the lattice mismatch between the semiconductor epitaxial stack 1 and the etching barrier layer 190 can be reduced, the crystal quality of the etching barrier layer can be improved, and the luminous efficiency of the light emitting diode can be improved.

Embodiment 3

[0079] The manufacturing process of the light emitting diode of the above-mentioned embodiment 2 will be described in detail below.

[0080] First, if Figure 6 As shown, a substrate 100 is provided, and the substrate 100 has a first surface S1 and a second surface S2 opposite to each other; preferably, the substrate 100 is a GaAs substrate; on the first surface S1 of the substrate 100 The first conductivity type semiconductor layer 110 , the active layer 120 and the second conductivity type semiconductor layer 130 are sequentially formed. Specifically, a semiconductor epitaxial stack can be grown sequentially by using MOCVD (metal organic compound chemical vapor deposition) process. Optionally, the semiconductor epitaxial stack includes an N-type layer, a quantum well layer, and a P-type layer in sequence; optionally, the N-type layer includes an N-type buffer layer and an N-type confinement layer in sequence; in this embodiment, the N-type The buffer layer is a GaAs buffer ...

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Abstract

The invention discloses a light-emitting diode and a manufacturing method, and the light-emitting diode comprises: a substrate which is provided with a first surface and a second surface which are opposite to each other; a semiconductor epitaxial laminated layer which comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are laminated on the first surface of the substrate; a side wall which is formed on the edge of the semiconductor epitaxial laminated layer, wherein the side wall is provided with a coarsening structure, and the coarsening structure comprises a bulge; an etching barrier layer which is located on the upper surface, far away from the substrate, of the semiconductor epitaxial laminated layer. The etching barrier layer can prevent etching liquid from etching the upper surface of the semiconductor epitaxial laminated layer in the side wall coarsening process, the appearance yield of the semiconductor light-emitting diode is improved, and the photoelectric property of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, belonging to the field of semiconductor optoelectronic devices and technologies. Background technique [0002] Light Emitting Diodes (LEDs for short) have been widely used in various light source fields such as backlighting, lighting, and landscapes because of their high luminous efficiency and longer service life. Further improving the luminous efficiency of LED chips is still the focus of current industry development. [0003] There are several ways to improve the luminous efficiency, including improving the quality of epitaxial growth, and increasing the internal quantum efficiency (IQE) by increasing the probability of combining electrons and holes. On the other hand, if the light generated by the light-emitting diode cannot be effectively extracted, part of the light will be reflected or refracted inside the light-emitting diode due to total reflection factors, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/22H01L33/00
CPCH01L33/44H01L33/22H01L33/0062H01L2933/0025H01L33/20H01L33/30
Inventor 沈午祺胡蝶吴少华王凌飞宁振动谢振刚张君逸王笃祥
Owner TIANJIN SANAN OPTOELECTRONICS
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