Cutting method of GaAs-based LED chip

Abstract

The invention relates to a cutting method of a GaAs-based LED chip. The cutting method comprises the following specific steps: (1) grinding a front-end semi-finished product COW of the GaAs-based LEDchip; (2) evaporating an ohmic contact metal film layer on the N surface of the COW; (3) corroding the ohmic contact metal film layer on the N surface of the COW to form a cutting channel; (4) coatingthe P surface of the COW with a curing adhesive; (5) transferring the COW to ICP etching equipment, and carrying out ICP dry etching; (6) covering the N surface of the COW with a blue film; and (7) removing the curing adhesive on the P surface of the COW to obtain the independent chip. According to the method, the ICP etching technology is adopted to cut the N surface of the front process semi-finished product COW of the GaAs-based LED chip, the ohmic contact metal film layer is adopted as a mask to perform ICP dry etching, the cutting efficiency is high, the phenomena of P collapse and N collapse do not occur, and the appearance yield is 10-20% higher than that obtained through mechanical cutting.

Description

technical field [0001] The invention relates to a method for cutting GaAs-based LED chips, belonging to the technical field of semiconductor chip cutting. Background technique [0002] With the rapid development of social economy, energy issues have gradually become a global issue; LED chips have the characteristics of high brightness, rich colors, low power consumption, and long life. LEDs are widely used in lighting, display, backlight and other fields. With the improvement of technology, the photoelectric conversion efficiency has been significantly improved. Compared with 3 years ago, the existing technology can produce the same brightness on 50% of the chip area, so the chip area is gradually reduced, that is, a smaller area can obtain the same brightness. Brightness, the chip is getting smaller and smaller. [0003] The cutting process in the preparation process of gallium arsenide-based LED chips is to divide the whole chip into a single chip. At present, GaAs-based ...

AI Technical Summary

Problems solved by technology

This method etches from the front of the COW, which requires a thicker photoresist or other medium as a mask, and the etching depth is affected by the thickness of the photoresist or other dielectric mask, so it is not suitable for deep etching. After a long time of etching , the temperature in the reaction chamber will cause the deformation of the photoresist, and the final deformation will be transferred to the chip, and the preset structure cannot be realized.

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