Manufacturing method of mo alloy sputtering target and mo alloy sputtering target

A technology of sputtering target material and manufacturing method, which is applied in the manufacture of Mo alloy sputtering target material and the field of Mo alloy sputtering target material, can solve the problems of low adhesion of substrates, achieve excellent adhesion and improve reliability , the effect of low resistance

Active Publication Date: 2016-02-17
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Cu in the main wiring film can obtain contact with ITO, it has low adhesion to the substrate, so in order to ensure the adhesion, it is necessary to make a laminated wiring film that covers the substrate with Mo or Mo alloy as a base film

Method used

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  • Manufacturing method of mo alloy sputtering target and mo alloy sputtering target
  • Manufacturing method of mo alloy sputtering target and mo alloy sputtering target
  • Manufacturing method of mo alloy sputtering target and mo alloy sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] In order to produce a Mo alloy sputtering target material consisting of 20%Ni-15%Ti in atomic ratio-the remainder is composed of Mo and unavoidable impurities, the following powders are prepared: Mo powder with a purity of 99.99% and an average particle size of 6μm; Ni-30 atomic % Mo alloy powder with a purity of 99.9% and an average particle size of 70 μm produced by the chemical method; Ti powder with a purity of 99.8% and an average particle size of 30 μm.

[0056] Each powder was weighed so that it might become a component of the said Mo alloy sputtering target material, and it mixed using the cross rotation mixer, and the mixed powder was obtained. After that, it was filled into a mild steel container with an inner diameter of 133 mm, a height of 30 mm, and a thickness of 3 mm, and was degassed by heating at 450° C. for 10 hours. Then, the mild steel container was sealed and kept at 1000° C. and 148 MPa for 5 hours for sintering. After cooling, it was taken out fr...

Embodiment 2

[0067] In order to make a Mo alloy sputtering target with atomic ratio of 15%Ni-15%Ti-the rest is composed of Mo and unavoidable impurities, the following powders are prepared: Mo powder with a purity of 99.99% and an average particle size of 6 μm; Ni-50 atomic % Ti alloy powder with a purity of 99.9% and an average particle size of 60 μm produced by the atomization method.

[0068] Each powder was weighed so that it could form the component of the said Mo alloy sputtering target material, and it mixed using the cross rotary mixer, and the mixed powder was obtained. After that, fill it into a mild steel container with an inner diameter of 133mm, a height of 30mm, and a thickness of 3mm, heat it at 450°C for 10 hours for degassing, then seal the mild steel container, and keep it at 1000°C and 148MPa for 5 hours using a HIP device Sintered. After cooling, it was taken out from the HIP apparatus, and the mild steel container was removed by machining to obtain a Mo alloy sputteri...

Embodiment 3

[0078] In order to make a Mo alloy sputtering target with atomic ratio of 40%Ni-10%Ti-the rest is composed of Mo and unavoidable impurities, the following powder is prepared: Mo powder with a purity of 99.99% and an average particle size of 6 μm; Ni-40 atomic % Ti alloy powder with a purity of 99.9% and an average particle size of 55 μm; Ni-20 atomic % Mo alloy powder with an average particle size of 65 μm produced by the atomization method.

[0079] Each powder was weighed so that it could form the component of the said Mo alloy sputtering target material, and it mixed using the cross rotary mixer, and the mixed powder was obtained. After that, fill it into a mild steel container with an inner diameter of 133mm, a height of 30mm, and a thickness of 3mm, heat it at 450°C for 10 hours for degassing, then seal the mild steel container, and keep it at 1000°C and 148MPa for 5 hours using a HIP device Sintered. After cooling, it was taken out from the HIP apparatus, and the mild s...

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Abstract

The invention provides a manufacturing method of a Mo alloy sputtering target material and a Mo alloy sputtering target material. The method is capable of stably and cheaply providing a nonmagnetic novel Mo alloy sputtering target material with low resistance, heat resistance, resistance to moisture, excellent sealing performance, high density of layout film, high purity, and suitable for being used as an electrode. In a manner satisfying a constituent comprising 10% to 49% by atom of Ni, 10% to 30% by atom of Ti, and the rest part formed by Mo and inevitable impurities, wherein the total amount of the Ni and the Ni is below 50% by atom, the Mo powders and at least one or more than two Ni alloy powders are mixed and then pressurized and sintered. The Mo alloy sputtering target material comprises 10% to 49% by atom of Ni, 10% to 30% by atom of Ti, and the rest part formed by Mo and inevitable impurities, wherein the total amount of the Ni and the Ni is below 50% by atom; and comprises a tissue dispersing Ni alloy phase in Mo substrate.

Description

technical field [0001] This invention relates to the manufacturing method of the Mo alloy sputtering target material for forming the electrode for electronic components, and a wiring thin film, and a Mo alloy sputtering target material. Background technique [0002] In addition to liquid crystal displays (LiquidCrystalDisplay: hereinafter referred to as LCD), plasma display panels (PlasmaDisplayPanel: hereinafter referred to as PDP), electronic paper, etc. : hereinafter referred to as FPD), in various semiconductor devices, thin film sensors, magnetic heads and other thin film electronic components also need low-resistance wiring film. For example, FPDs such as LCDs, PDPs, and organic EL displays are required to have lower resistance of their wiring films due to larger screens, higher resolution, and faster response. In addition, in recent years, new products such as touch panels that increase operability for FPDs and flexible FPDs using resin substrates have been developed...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/14C23C14/34C22C27/04
CPCB22F3/12C23C14/14C23C14/34
Inventor 村田英夫上滩真史井上惠介
Owner HITACHI METALS LTD
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