Self-grown graphene electrode light-emitting diode and preparation method thereof

Abstract

The invention discloses a self-growing-grapheme-electrode light emitting diode and a preparation method thereof. The light emitting diode is formed through sequential combination of a substrate layer, a first semiconductor layer, an active layer, a second semiconductor layer, a metal insert layer and a grapheme-electrode layer. The metal insert layer is used as a catalyst in preparation of a grapheme electrode through a CVD method so as to realize self growing of the grapheme, and the metal insert layer and a grapheme material of the grapheme electrode layer are enabled to form the grapheme composite electrode. The method adopts the grapheme film and the metal insert layer to form the composite electrode which is arranged on a system formed sequentially by the substrate, the first semiconductor layer, the active layer and the second semiconductor layer and thus a complete device structure is formed. In the self-growing-grapheme-electrode light emitting diode and the preparation method thereof, the metal insert layer is used as the catalyst to realize self growing of the grapheme electrode through the CVD method and through excellent contact characteristics of the metal insert layer with the semiconductor and the grapheme, the interface characteristics of the device are improved; and through the metal insert layer, charge injection between the grapheme and the semiconductor is improved and the performance of the device is optimized.

Description

technical field [0001] The invention relates to a semiconductor device and a preparation process thereof, in particular to a self-grown graphene electrode light-emitting diode and a preparation method thereof, which are applied in the technical field of structure and preparation of light-emitting diode devices. Background technique [0002] Graphene is a monoatomic layer crystal composed of carbon atoms tightly packed, which has many unique properties, such as high specific surface area, good thermal stability, and excellent thermal conductivity. These excellent properties make graphene have good application prospects in the fields of nanoelectronic devices, gas sensors, supercapacitors and energy storage. In particular, graphene has a very high transmittance in the visible light band and good electrical and thermal transmission properties. The theoretical transmittance of single-layer graphene can reach 97.7% at 550nm, making it potential to become an ideal transparent cond...

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Problems solved by technology

However, graphene is easily damaged and impurities are introduced during the transfer process; the transferred graphene and the substrate are bonded by Van der Waals force, which is easy to separate or fall off in the subsequent process, thereby affecting the performance of the device; and graphite The work function of ene and LED semiconductor layer is quite different, which is not conducive to charge injection.

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