High-voltage-resistant semiconductor device

Abstract

The invention discloses a high-voltage-resistant semiconductor device. The high-voltage-resistant semiconductor device comprises an upper table body and a lower table body which is in surface contact with the bottom surface of the upper table body. A heavy doping N-type region is located over a light doping N-type region, so that a first contact surface is formed. A heavy doping P-type region is located under a light doping P-type region, so that a second contact surface is formed. The light doping N-type region of the upper table body makes contact with the light doping P-type region of the lower table body to form a PN junction contact surface and is located over the light doping P-type region. The first contact surface is an upward convex surface. The second contact surface is a downward concave surface. The upper region, making contact with the heavy doping N-type region, of the light doping N-type region and the peripheral region located at the edge of the light doping N-type region are provided with medium doping N-type regions. The lower region, making contact with the heavy doping P-type region, of the light doping P-type region and the peripheral region located at the edge of the light doping P-type region are provided with medium doping P-type regions. The high-voltage-resistant semiconductor device improves the high-temperature-resistant performance and reduces the gradient of the electric field intensity at the edges, thereby improving voltage-resistant performance.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a high-voltage-resistant semiconductor device. Background technique [0002] The work of the diode is mainly based on the characteristics of the PN junction of the semiconductor silicon chip (grain) that can conduct forward conduction and reverse cut-off for the current to achieve the purpose of rectifying the power supply. It is widely used in industry, civil, military and other fields, because it is It is an indispensable way to convert alternating current into direct current, and it is small in size, and there is no better product that can replace it in the long run. [0003] Transient voltage suppression diode TVS can ensure that circuits and electronic components are protected from static electricity, surge pulse damage, or even failure. Generally, the TVS is connected in parallel at both ends of the protected circuit and is in a standby state. When both ends of the circuit are im...

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Problems solved by technology

[0002]The diode works mainly by the PN junction of the semiconductor silicon chip (grain) in which the current can be forward-conducting and reverse-blocking to achieve the purpose of power rectification , are widely used in industry, civil, military and other fields, because it is an indispensable way to convert alternating current into direct current, and it is small in size, and there is no better product that can replace it for a long time

Correspondingly, its power consumption will also increase by several orders of magnitude, which will increase the local temperature rise of the device, resulting in circuit instability and seriously affecting the stability and life of the device.

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