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Multilayer chemical-mechanical polishing pad with broad-spectrum endpoint detection window

A chemical-mechanical, end-point detection technology, applied in the field of polishing pads, can solve problems such as reduced compressibility, reduced compressibility, and increased polishing defects

Active Publication Date: 2017-03-01
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The second portion is less compressible relative to the remainder of the backing layer due to penetration of the sealant material therein
Since the window sealing area is within the polishing track, the second portion of the same thickness, reduced compressibility acts like a speed bump during the polishing operation, increasing the likelihood of polishing defects

Method used

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  • Multilayer chemical-mechanical polishing pad with broad-spectrum endpoint detection window
  • Multilayer chemical-mechanical polishing pad with broad-spectrum endpoint detection window
  • Multilayer chemical-mechanical polishing pad with broad-spectrum endpoint detection window

Examples

Experimental program
Comparison scheme
Effect test

Embodiment WB1

[0114] Example WB1: Preparation of endpoint detection window block

[0115] Made of 20 mil thick polydicyclopentadiene cyclic olefin polymer sheet (in 1420R (available from Zeon Corporation) to cut out a circular test window with a diameter of 10.795 cm.

Embodiment WB2

[0116] Embodiment WB2: the preparation of endpoint detection window block

[0117] From a 20 mil thick sheet of cyclic olefin copolymer prepared from norbornene and ethylene using a metallocene catalyst (in 6013 purchased from Topas Advanced Polymers, Inc.) A circular test window with a diameter of 10.795 cm was cut out.

Embodiment T1

[0118] Embodiment T1: window block spectral loss analysis

[0119] Prepare the window block material according to the method of Comparative Example WBC and Example Examples WB1-WB2, and then use the following instruments to test the above-mentioned material according to ASTM D1044-08: Equipped with Verity FL2004 flashlight and Spectraview1 software (version is VI4.40) Verity SD1024D spectrograph, and Taber 5150 Abraser type grinding tool equipped with Type H22 grinding wheel (500 gram weight, 60 rpm and 10 cycles). The measured transmittance losses of the window bulk materials at various wavelengths are shown in Table 1. The spectral loss of each window bulk material is also shown in Table 1.

[0120] Table 1

[0121]

[0122]

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PUM

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Abstract

The invention provides a multi-layer chemical mechanical polishing pad, which comprises: a polishing layer having a polishing surface, a reaming opening, a polishing layer interface region parallel to the polishing surface; a porous sub-pad layer, the sub-pad layer having a bottom surface and a porous subpad interface region parallel to the bottom surface; and a broad spectrum endpoint detection window block comprising a cyclic olefin addition polymer; wherein the broad spectrum endpoint detection window block has a uniform thickness across its thickness wherein the polishing layer interface region and the porous subpad layer interface region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a bottom surface extending from the polishing surface to the porous subpad layer wherein, the reaming opening is opened on the polishing surface, so that the through opening is enlarged and forms a stepped portion; and wherein, the broad-spectrum endpoint detection window block is disposed on the reaming opening Inside.

Description

technical field [0001] The present invention relates generally to the field of polishing pads for chemical mechanical polishing. In particular, the present invention relates to a multilayer chemical mechanical polishing pad having a pluggable broad spectrum endpoint detection window block; wherein the broad spectrum endpoint detection window block has a spectral loss of ≤ 40%. The present invention also relates to a method of chemically mechanically polishing a substrate using a multilayer chemical mechanical polishing pad having a plug-in broad-spectrum endpoint detection window block; wherein the broad-spectrum endpoint detection window block has a spectrum of ≤40% loss. Background technique [0002] Chemical mechanical planarization, or chemical mechanical polishing (CMP), is a conventional technique used to planarize or polish workpieces such as semiconductor wafers. In conventional CMP, a wafer holder or polishing head is mounted on a holder assembly. The polishing h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/24C08F210/02C08F232/06C08F232/08
CPCB24B37/24C08F210/02C08F232/06C08F232/08B24B37/013B24B37/205B24B37/22B32B5/022B32B5/024B32B7/12B32B27/065B32B27/12B32B27/325B32B27/327B32B37/12B32B2266/06B32B2307/208B32B2432/00B32B37/1284
Inventor A·雷珀D·B·詹姆士M·A·洛伊格斯M·德格鲁特
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC