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Process for preparing trichlorosilane by utilizing reverse disproportionation reaction

A technology of trichlorosilane and anti-disproportionation, applied in the directions of halogenated silicon compounds, halogenated silanes, etc., can solve problems such as the enrichment of silicon tetrachloride, and achieve the effect of improving the utilization rate of raw materials and solving the enrichment.

Inactive Publication Date: 2014-09-17
SHAANXI TIANHONG SILICON IND
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Problems solved by technology

[0006] The technical problem to be solved in the present invention is to provide a process for preparing trichlorosilane by anti-disproportionation reaction, and convert the low-value raw materials dichlorodihydrosilane and silicon tetrachloride into high-value product trichlorosilane, Effectively improve the utilization rate of raw materials, and at the same time solve the problem of enrichment of dichlorodihydrosilane and silicon tetrachloride

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  • Process for preparing trichlorosilane by utilizing reverse disproportionation reaction

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Embodiment Construction

[0021] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0022] refer to figure 1 , using the process of preparing trichlorosilane by anti-disproportionation reaction, and converting the by-products dichlorodihydrosilane and silicon tetrachloride in the production process of the improved Siemens method into trichlorosilane.

[0023] After removing impurities in a rectifying tower, silicon tetrachloride reacts with a small amount of dichlorodihydrosilane in a solidified bed reactor equipped with a basic resin catalyst at a certain bed height to produce trichlorosilane and excess Silicon tetrachloride, enters the rectification tower containing the chimney tray, removes a small amount of silane and light component trace impurities from the top of the rectification tower, and the upper side of the rectifi...

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Abstract

The invention discloses a process for preparing trichlorosilane by utilizing reverse disproportionation reaction. The process is characterized by comprising the following steps: step (1): conveying silicon tetrachloride into a rectifying tower from the bottom of the rectifying tower, pumping out and sufficiently mixing with dichlorosilane in a static mixer after purifying, wherein a mass ratio of the dichlorosilane to the silicon tetrachloride is 1to 10; a step (2): feeding the silicon tetrachloride and the dichlorosilane which are sufficiently mixed in the step (1) into a fixed-bed reactor for reacting; and step (3): conveying a synthesis gas reacting in the fixed-bed reactor in the step (2) into the rectifying tower, wherein trichlorosilane is discharged from the middle position of the rectifying tower. According to the process disclosed by the invention, the raw materials, namely dichlorosilane and silicon tetrachloride with lower value are converted into trichlorosilane with a very high utilization value, so that material utilization rate is effectively increased; meanwhile, a problem that the dichlorosilane and the silicon tetrachloride are enriched is solved.

Description

technical field [0001] The invention relates to the field of trichlorosilane preparation, in particular to a process for preparing trichlorosilane by an anti-disproportionation reaction. Background technique [0002] Trichlorosilane is also known as trichlorosilane, silicon chloroform, English name: trichiorosilane or silicochioroform, molecular formula is SIHCL 3 , used in the synthesis of organosilanes and alkyl, aryl and organofunctional group chlorosilanes, is the most basic monomer in organosilane coupling agents, and is also the raw material for the production of semiconductor silicon, single crystal silicon and polycrystalline silicon. [0003] Anti-disproportionation technology is a process of consuming silicon tetrachloride and dichlorodihydrosilane to generate trichlorosilane at a certain temperature and pressure under a specific bed height equipped with a specific resin. At the same time, the process of separating the product by rectification, the principle is: f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
Inventor 蒯伟宋安宁秦渊博臧国良赵亚文
Owner SHAANXI TIANHONG SILICON IND
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