Etching chamber for manufacturing semiconductor LED

Abstract

The purpose of the present invention is to improve the structure of an etching chamber for manufacturing a semiconductor LED, such that a failure rate due to byproducts, which are deposited by being generated in an etching step, falling on a wafer is remarkably lowered and the decline in productivity caused by frequent cleaning of the chamber is reduced. The present invention enables: a wafer to be provided on the ceiling of the upper part of the chamber to face the bottom thereof; a vacuum pump to be formed at a vertical lower portion; and a device for generating plasma to be arranged under the vacuum pump, wherein a vertical lower part is opened such that byproducts can be immediately discharged through the vacuum pump without falling on the wafer.

Description

technical field [0001] The present invention relates to the plasma etching process (etching; etching) in the process for manufacturing semiconductor light-emitting diodes, in particular, through the epoch-making structure improvement of the etching treatment chamber (chamber), greatly reduce the And the accumulation of byproducts (byproducts) falling to the wafer caused by bad problems, thereby reducing the decline in productivity caused by frequent cleaning of the processing chamber. Background technique [0002] As we all know, in order to manufacture semiconductors, multiple processes such as oxidation process, photoresist, exposure, development, etching, ion implantation, chemical vapor deposition, metal wiring, etc. are required, and the present invention relates to the use of Plasma dry etching. [0003] like figure 1 As shown, in the prior art, the general etching treatment chamber of light-emitting diode (LED) utilizing plasma has the following structure: a source ...

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Problems solved by technology

[0007] Due to such a problem, when the number of etching processes is accumulated, by-products accumulate on the surface affected by the plasma in the processing chamber. Generally, when the number of processes exceeds 80, the by-products form a layer, the structure becomes weak, and the by-products deposited on the wall surface Redissociation by plasma, during which by-product lumps fall off resulting in defective wafers

[0008] Therefore, usually the processing chamber should be cleaned before the by-products accumulated on the source insulator fall, and the current cycle does not exceed 100 operations, so the waste of time required for frequent cleaning results in a problem that the production efficiency is greatly reduced

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