Ferromagnetic semiconductor material li(zn,mn)p and preparation method thereof
A semiconductor and ferromagnetic technology, applied in the direction of phosphide, etc., can solve the problems of personal injury and difficult adjustment of carrier concentration, and achieve the effect of enhanced semiconductivity, good semiconductivity, and easy adjustment.
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Embodiment 1
[0034] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:
[0035] 1) Mix 0.35 g Li block, 3.27 g Zn powder, 2.75 g Mn powder and 3.10 g P powder in a glove box filled with argon gas, and press the mixture into an alumina ceramic test tube;
[0036] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;
[0037] 3) Put the quartz tube in a high-temperature furnace for sintering at 600°C for 20 hours. After sintering, the ferromagnetic semiconductor material Li 0.5 Zn 0.5 mn 0.5 p.
[0038] The X-ray diffraction pattern of the sample is as figure 1 shown, from figure 1 It can be seen that the sample has a single-phase structure, all diffraction peaks can find the corresponding diffraction index, the crystal structure is as figure 2 As shown, it has a space symmetry group of F-43m and belongs to the cubic crystal system. The relationship between the DC magnetic ...
Embodiment 2
[0040] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:
[0041] 1) Mix 1.04 g Li block, 3.92 g Zn powder, 2.2 g Mn powder and 3.10 g P powder evenly in an argon glove box, and put the mixture into an alumina ceramic test tube;
[0042] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;
[0043]3) Put the quartz tube in a high-temperature furnace for sintering at 1000°C for 5 hours. After sintering, the ferromagnetic semiconductor material Li 1.5 Zn 0.6 mn 0.4 p.
[0044] The X-ray diffraction pattern of the sample is as Figure 4 shown, from Figure 4 It can be seen that the sample has a single-phase structure, all diffraction peaks can find the corresponding diffraction index, the crystal structure is as figure 2 As shown, it has a space symmetry group of F-43m and belongs to the cubic crystal system. The relationship between the DC magnetic susceptibi...
Embodiment 3
[0046] This embodiment provides a method for preparing a ferromagnetic semiconductor material, including:
[0047] 1) In an argon-filled glove box, 2.00 g of Li 3 P, 1.80 grams of P, 4.43 grams of Zn, 1.60 grams of Mn are uniformly mixed, and the mixture is packed into a niobium tube, and the niobium tube is sealed under the protection of an inert gas;
[0048] 2) Vacuum seal the niobium tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;
[0049] 3) Sinter the quartz tube in a high temperature furnace at 750°C for 10 hours. After the sintering is completed, the ferromagnetic semiconductor material Li 1.2 Zn 0.7 mn 0.3 p.
[0050] The X-ray diffraction pattern of the sample is as Figure 6 shown, from Figure 6 It can be seen that the sample has a single-phase structure, all diffraction peaks can find the corresponding diffraction index, the crystal structure is as figure 2 As shown, it has a space symmetry group of F-43m and belongs t...
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