A mems piezoresistive acceleration and pressure integrated sensor and manufacturing method
An acceleration sensor, pressure sensor technology, applied in the direction of speed/acceleration/impact measurement, acceleration measurement using inertial force, measurement of property force using piezoresistive materials, etc. Difficulties and other problems to achieve good performance and reduce costs
Active Publication Date: 2017-04-12
江苏英特神斯科技有限公司
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Problems solved by technology
However, compared with integrated circuits, the integration of sensors is more difficult. The reason is that the working principles and structural solutions of different sensors are very different. From the perspective of working principles, some sensors are based on the principle of resistance sensitivity, and some sensors are based on the principle of capacitance sensitivity. ; From the point of view of structural schemes, some require special structures such as thin films, while others require special sensitive materials
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[0055] The present invention will be further described below in conjunction with the accompanying drawings, but the protection scope of the present invention is not limited thereto.
[0056] Such as figure 1 As shown, the MEMS piezoresistive acceleration and pressure integrated sensor adopts the first bonded glass-silicon base-second bonded glass sandwich structure, and the MEMS piezoresistive acceleration and pressure integrated sensor mainly includes : Silicon base (7), piezoresistive acceleration sensor cantilever for measuring uniaxial acceleration (13), piezoresistive pressure sensor diaphragm for pressure measurement (16), concentrated boron wire (8), metal tube The feet (6), the second bonding glass (17) bonded with the silicon base anodically, and the first bonded glass (4) bonded with the amorphous silicon (5) anodically.
[0057] Wherein, the upper surface root of the piezoresistive acceleration sensor cantilever beam (13) for measuring uniaxial acceleration is inje...
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Abstract
The invention discloses an MEMS piezoresistive accelerated speed and pressure integration sensor based on anodic bonding packaging and a manufacturing method thereof. The sensor integrates a piezoresistive acceleration sensor and a piezoresistive pressure sensor simultaneously and has a sandwich structure composed of first bonding glass, a silicon substrate and second bonding glass. The MEMS piezoresistive accelerated speed and pressure integration sensor is novel in structure, low in weight, small in size, good in stability and high in anti-pollution capacity. Besides, according to the MEMS piezoresistive accelerated speed and pressure integration sensor, the same process and different design modes are used for the same chip, and accordingly pressure measurement and acceleration speed measurement are achieved, and the process procedures are simple. The sensor has certain application prospects in the fields of aerospace, military, automobiles, environment monitoring and the like.
Description
[0001] (1) Technical field [0002] The invention relates to a piezoresistive acceleration and pressure integrated sensor in the field of MEMS (micro-electromechanical systems) sensors and a manufacturing method thereof, in particular to a MEMS piezoresistive acceleration and pressure integrated sensor based on anodic bonding packaging and a manufacturing method thereof. [0003] (2) Background technology [0004] With the advancement of micromachining technology and the application requirements of small intelligent sensor systems, the integration of multiple sensors on a single chip has become a development trend. In aerospace, military, automobile, environmental monitoring and other fields, parameters such as acceleration, pressure and temperature are often measured simultaneously. However, in these applications, due to the strict limitations of environmental adaptability, volume, cost, and functions, the sensors are required to be miniaturized, integrated, and multifunctiona...
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IPC IPC(8): G01P15/12G01L1/18B81B7/00B81C1/00
Inventor 董健蒋恒孙笠
Owner 江苏英特神斯科技有限公司