A method for detecting the quality of through-silicon vias

Abstract

The invention provides a silicon through hole quality detection method, and relates to the technical field of semiconductors. According to the silicon through hole quality detection method, a test structure is formed above silicon through holes of a semiconductor device, and heat treatment is performed on the semiconductor device so that cavities of the silicon through holes with the cavities in the internal part of the semiconductor device are expanded and then the surface of the test structure protrudes. Then the surface abnormal situation of the test structure is detected by utilizing a defect detection machine stand so that detection of the cavity defect in the internal parts of the silicon through holes is realized. The cavity defect in the internal parts of the silicon through holes can be timely and efficiently found, and defect data can be quantitatively and non-destructively given so that final product yield rate is enhanced, and defects in detection of X-ray and conventional defect detection machine stands can be compensated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting the quality of through-silicon vias. Background technique [0002] In the field of semiconductor technology, three-dimensional packaging is a packaging technology that can significantly reduce the volume and weight of electronic systems, increase system speed and yield, and reduce system power consumption. Three-dimensional packaging can eliminate faulty ICs during device assembly, so the yield and reliability of the final semiconductor device are much better than discrete device packaging. [0003] Through Silicon Via (TSV) is a technology developed based on three-dimensional packaging requirements. This technology can use TSV structure to stack bare chips or multi-chip modules (MCM) along the Z-axis, greatly reducing the packaging volume of the system. Small. Because this Z-plane technology greatly shortens the total interconnection length, the p...

AI Technical Summary

Problems solved by technology

However, traditional X-ray inspection also has the following disadvantages: First, the limitation of resolution makes it difficult to detect defects below 1um

Second, the scanning speed limits the scale of online inspection, especially it is difficult to achieve comprehensive inspection of the entire wafer

Third, the current level of technology development has not yet reached the ability to automatically record defect-related data

However, the defect inspection machine can only detect defects that affect the surface. When the voids (voids) inside the TSV cannot be fully detected under X-ray inspection and the resolution of X-ray inspection is insufficient, the defect inspection machine will also its helpless

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