Main grid-free back-contact solar cell module and preparation method for same
A solar cell and back contact technology, applied in the field of solar cells, can solve problems such as high cost, cumbersome electrode manufacturing process, and complicated metallized electrode manufacturing process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0059]The busbar-free back-contact solar cell assembly provided in this embodiment includes glass 1, EVA2, tandem cells, EVA2 and a back sheet 4 arranged from top to bottom, the tandem cells are arranged on a conductive back sheet 301 and A plurality of busbar-free back-contacted solar cells 302 in ohmic contact with the conductive backplane.
[0060] Such as figure 1 As shown in , the busbar-free back-contact solar cell provided in this embodiment includes an N-type single crystal silicon substrate 10, a p+ doped region 11 and an n+ doped region 13 arranged on the back side of the silicon substrate, and a p+ / n+ region Electrically insulated band gaps 15, p+ doped regions 11 and n+ doped regions 13 are alternately arranged on the back side of the silicon substrate 10, and p+ doped regions 11 and n+ doped regions 13 are respectively provided with phase ohmic contacts. The metal dot electrodes 12 in the p+ area and the metal dot electrodes 14 in the n+ area are used to extract...
Embodiment 2
[0083] The difference from Example 1 is that the electrode arrangement of the busbar-free back-contact solar cell in this example is a one-dimensional grid line array structure, that is, p+ doped regions and n+ doped regions are alternately distributed on the back of the silicon substrate. Arranged in one dimension, the metal electrodes in contact with the p+ and n+ doped regions and phases are metal fine grid electrodes, such as Figure 2B shown.
Embodiment 3
[0085] The difference from Example 1 is that in this implementation, the first conductive plate is in ohmic contact with the p+ region metal dot electrode or metal fine grid electrode on the back contact solar cell without busbar, and the first conductive plate is in ohmic contact with the back contact solar cell without busbar. The metal dot electrode or metal fine grid electrode in the n+ area on the upper part is in ohmic contact with the second conductive plate, such as Figure 11B As shown, that is, the n+ region metal dot electrode or metal fine grid electrode 14 on the back contact solar cell without main grid passes through the conductive paste 70 in the array of through holes A22 on the first insulating layer, and connects with the first through hole C32 and through hole D42. The two-electrode conductive plate 50 is in contact with each other, and the p+ region metal dot electrode or metal fine grid electrode 12 on the solar cell without main grid back contact is direc...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Resistivity | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 