Co-cr-pt-based sputtering target and method for producing same

A manufacturing method and technology for sputtering targets, which are applied in the field of sputtering targets, can solve the problems of particle size and number limitation, and achieve the effects of reducing the amount of particles, improving the yield and improving the dispersibility.

Active Publication Date: 2014-10-01
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, with the increase of the recording density of the hard disk drive, the flying height (floating amount) of the magnetic head has been reduced, so the size and number of particles allowed in the magnetic recording medium are increasingly restricted.

Method used

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  • Co-cr-pt-based sputtering target and method for producing same
  • Co-cr-pt-based sputtering target and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Prepare Co powder with an average particle size of 3 μm and Cr powder with an average particle size of 5 μm as metal raw material powders; prepare TiO with an average particle size of 1 μm 2 Powder, SiO with an average particle size of 1 μm 2 powder as an oxide raw material powder. Then, in order to prepare mixed powder A and mixed powder B, each 1600g was weighed according to the following composition ratio.

[0050] (Mixed powder A): 90.5Co-9.5TiO 2 (mol%)

[0051] (Mixed powder B): 72.36Co-20.73Cr-6.91SiO 2 (mol%)

[0052] Then the weighed powders were sealed together with the pulverizing medium zirconia balls in a ball mill jar with a capacity of 10 liters, and mixed by rotating for 20 hours. Then, only the mixed powder A was filled into a carbon mold, and hot-pressed under the conditions of a vacuum atmosphere at a temperature of 1000° C., a holding time of 2 hours, and a pressing pressure of 30 MPa to obtain a sintered body (sintered body A ). Then, the sin...

Embodiment 2

[0065] Prepare Co powder with an average particle size of 3 μm, Cr powder with an average particle size of 5 μm, and Pt powder with an average particle size of 2 μm as metal raw material powders; prepare TiO with an average particle size of 1 μm 2 Powder, SiO with an average particle size of 1 μm 2 Powder, Cr with an average particle size of 3 μm 2 o 3 powder as an oxide raw material powder. Then, in order to prepare mixed powder A and mixed powder B, each 2000g was weighed according to the following composition ratio.

[0066] (Mixed powder A): 68.15Co-22.29Pt-4.78TiO 2 -4.78Cr 2 o 3 (mol%)

[0067] (Mixed powder B): 59.68Co-32.26Cr-8.06SiO 2 (mol%)

[0068] Then the weighed powders were sealed together with the pulverizing medium zirconia balls in a ball mill jar with a capacity of 10 liters, and mixed by rotating for 20 hours. Then, only the mixed powder A was filled in a carbon mold, and a sintered body (sintered body A) was obtained by hot pressing in a vacuum at...

Embodiment 3

[0075] Prepare Co powder with an average particle size of 3 μm, Cr powder with an average particle size of 5 μm, and Pt powder with an average particle size of 2 μm as metal raw material powders; prepare TiO with an average particle size of 1 μm 2 Powder, SiO with an average particle size of 1 μm 2 Powder, Cr with an average particle size of 3 μm 2 o 3 powder as an oxide raw material powder. Then, in order to prepare mixed powder A and mixed powder B, each 2000g was weighed according to the following composition ratio.

[0076] (Mixed powder A): 81.76Co-9.12Pt-4.56TiO 2 -4.56Cr 2 o 3 (mol%)

[0077] (Mixed powder B): 32.75Co-35.09Cr-23.39Pt-8.77SiO 2 (mol%)

[0078] Then the weighed powders were sealed together with the pulverizing medium zirconia balls in a ball mill jar with a capacity of 10 liters, and mixed by rotating for 20 hours. Then, only the mixed powder A was filled into a carbon mold, and hot-pressed under the conditions of a vacuum atmosphere at a tempera...

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Abstract

A sputtering target which contains, as metal components, 0.5-45 mol% of Cr and the balance of Co, while containing, as non-metal components, two or more oxides including Ti oxide. This sputtering target is characterized in that: the structure thereof is composed of regions where oxides including at least Ti oxide are dispersed in Co (non-Cr regions) and a region where oxides other than Ti oxide are dispersed in Cr or Co-Cr (a Cr region); and the non-Cr regions are scattered about in the Cr region. The present invention addresses the problem of providing a sputtering target for forming a granular film, which suppresses the formation of coarse complex oxide particles and generates less particles during the sputtering.

Description

technical field [0001] The present invention relates to a sputtering target for forming a particle film of a magnetic recording medium in a perpendicular magnetic recording system HDD (hard disk drive), and particularly relates to a Co-Cr-Pt-based sputtering target in which an oxide is finely dispersed. Background technique [0002] In the field of magnetic recording represented by hard disk drives, materials based on ferromagnetic metals Co, Fe, or Ni have been used as materials for magnetic thin films in magnetic recording media. [0003] In recent years, a composite material containing a Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component and nonmagnetic inorganic particles is often used as a magnetic thin film of a hard disk drive using a perpendicular magnetic recording method that has been put into practical use. In addition, from the standpoint of productivity, the above-mentioned magnetic thin film is often produced by sputtering a sintered sputterin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/851B22F1/00B22F9/04C22C1/05C22C19/07C22C32/00C23C14/34B22F1/12
CPCG11B5/851C22C32/0026C23C14/06C23C14/34B22F9/04C22C1/10C22C19/07C23C14/3414C22C1/05B22F1/00H01J37/3429B22F1/12B22F5/00B22F2201/10B22F2201/20B22F2302/25
Inventor 佐藤敦池田祐希荒川笃俊高见英生中村祐一郎
Owner JX NIPPON MINING & METALS CORP
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