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Composition for forming passivation film, semiconductor substrate provided with passivation film and method for producing same, and solar cell element and method for producing same

A technology of passivation film and composition, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of solar cell characteristics degradation, impossibility, insufficient aluminum content, etc., and achieve easy storage and stability Effect

Inactive Publication Date: 2014-10-01
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the coating amount of the aluminum paste is reduced, the amount of aluminum diffused from the surface of the p-type silicon semiconductor substrate to the inside becomes insufficient.
Result: the desired BSF (Back Surface Field, back field) effect cannot be achieved (because p + The effect of improving the collection efficiency of the generated carriers due to the existence of the type diffusion layer), so there is a problem that the characteristics of the solar cell are degraded

Method used

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  • Composition for forming passivation film, semiconductor substrate provided with passivation film and method for producing same, and solar cell element and method for producing same
  • Composition for forming passivation film, semiconductor substrate provided with passivation film and method for producing same, and solar cell element and method for producing same
  • Composition for forming passivation film, semiconductor substrate provided with passivation film and method for producing same, and solar cell element and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0167] (Preparation of Passivation Film Forming Composition)

[0168] 2.00 g of tri-sec-butoxyaluminum and 2.01 g of terpineol were mixed to prepare an organoaluminum compound solution. Separately, 5.00 g of ethyl cellulose and 95.02 g of terpineol were mixed and stirred at 150° C. for 1 hour to prepare an ethyl cellulose solution. The obtained organoaluminum compound solution 2.16g and 3.00g of ethyl cellulose solutions were mixed, and the colorless transparent solution was prepared, and the composition 1 for passivation film formation was prepared. The content rate of ethyl cellulose in the composition 1 for passivation film formation was 2.9 %, and the content rate of the organoaluminum compound was 21 %.

[0169] The following evaluation was performed about the obtained composition 1 for passivation film formation. The evaluation results are shown in Table 1.

[0170] (Formation of passivation film)

[0171] A single-crystal p-type silicon substrate (manufactured by SU...

Embodiment 2

[0184] 4.79 g of tri-sec-butoxyaluminum, 2.56 g of ethyl acetoacetate, and 4.76 g of terpineol were mixed and stirred at 25° C. for 1 hour to obtain an organoaluminum compound solution. Separately, 12.02 g of ethyl cellulose and 88.13 g of terpineol were mixed and stirred at 150° C. for 1 hour to prepare an ethyl cellulose solution. Next, the composition 2 for semiconductor substrate passivation film formation was prepared by mixing 2.93 g of organoaluminum compound solutions, and 2.82 g of ethyl cellulose solutions to form a colorless and transparent solution. The content rate of ethyl cellulose in the composition 2 for passivation film formation was 5.9 %, and the content rate of the organoaluminum compound was 21 %.

[0185] Except having used the composition 2 for passivation film formation prepared above, the passivation film was formed on the preprocessed silicon substrate similarly to Example 1, and it evaluated similarly. The effective lifetime is 144μs.

[0186] Usi...

Embodiment 3

[0195] 4.96 g of tri-sec-butoxyaluminum, 3.23 g of diethyl malonate, and 5.02 g of terpineol were mixed and stirred at 25° C. for 1 hour to obtain an organoaluminum compound solution. The obtained organoaluminum compound solution 2.05g and the ethylcellulose solution 2.00g prepared similarly to Example 2 were mixed, the colorless and transparent solution was made, and the composition 3 for passivation film formation was prepared. The content rate of ethyl cellulose in the composition 3 for passivation film formation was 5.9 %, and the content rate of the organoaluminum compound was 20 %.

[0196] Except having used the composition 3 for passivation film formation prepared above, it carried out similarly to Example 1, and formed the passivation film on the preprocessed silicon substrate, and evaluated it similarly. The effective lifetime is 96μs.

[0197] Using the composition 3 for passivation film formation prepared above, the thixotropic ratio, storage stability, and printi...

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Abstract

The present invention provides a composition for forming a passivation film, the composition comprising an organoaluminum compound represented by general formula (I) and a resin. In the formula, R1 each independently represent a C1-8 alkyl group; n represents an integer 0 to 3; X2 and X3 each independently represent an oxygen atom or a methylene group; and R2, R3, and R4 each independently represent a hydrogen atom or a C1-8 alkyl group.

Description

technical field [0001] The present invention relates to a composition for forming a passivation film, a semiconductor substrate with a passivation film and its manufacturing method, a solar cell element and its manufacturing method. Background technique [0002] The manufacturing process of the conventional silicon solar cell element is demonstrated. [0003] First, a p-type silicon substrate with a textured structure formed on the light-receiving surface side is prepared in order to promote the light trapping effect and achieve high efficiency. Next, phosphorous oxychloride (POCl 3 ), nitrogen, and oxygen in a mixed gas atmosphere at 800°C to 900°C for tens of minutes to form an n-type diffusion layer uniformly. In this conventional method, since phosphorus is diffused using a mixed gas, an n-type diffused layer is formed not only on the surface of the light-receiving surface but also on the side surface and the rear surface. Therefore, side etching is performed to remove...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316H01L21/312H01L31/04
CPCH01L31/1868H01L31/02167Y02E10/50H01L31/022441H01L31/068H01L31/0682Y02E10/547Y02P70/50H01L31/022433H01L31/1804
Inventor 田中彻织田明博野尻刚吉田诚人
Owner RESONAC CORPORATION