Method of producing silicon-on-insulator article

A technology of silicon-on-insulator and products, applied in the field of manufacturing of silicon-on-insulator products or products, SOI products or products, can solve problems such as poor thermal conductivity and shorten the service life of devices

Inactive Publication Date: 2014-10-08
SILANNA GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to SiO 2 Relatively poor thermal conductivity, this buried dielectric layer is also a barrier to heat flow from devices fabricated in the silicon layer
Consequently, the channel temperature of MOSFET devices formed in thin silicon layers inevitably increases during operation to temperatures significantly higher than the corresponding temperatures of equivalent devices formed in bulk silicon wafers, thereby degrading device performance and possible Period of use

Method used

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  • Method of producing silicon-on-insulator article
  • Method of producing silicon-on-insulator article
  • Method of producing silicon-on-insulator article

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Experimental program
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Embodiment

[0067] A 200 nm thick AlN layer 702, 704 was deposited simultaneously on the clean silicon surfaces of the two silicon wafers 706, 708 by reactive sputtering (RS) at a temperature of about 300°C. Wafers 706, 708 are 600 [mu]m thick, bulk single crystal wafers with 100 Ohm-cm. Both wafers 706, 708 have a (100) crystallographic orientation. Both AlN layers 702, 704 are grown with nitrogen-rich surfaces to reduce oxidation, thereby increasing the bonding strength between the two AlN layers 702, 704.

[0068] Such as Figure 7 As shown, (only) a silicon wafer 708 is then ion implanted using hydrogen ions 710 through the AlN layer 704 to 6×10 at 150 keV 16 cm -2 energy density or magnetic recording density. This forms a buried hydrogen layer 712 at a depth 714 of about 1.21±0.01 μm below the wafer surface, ie, about 1.0 μm below the AlN:Si interface.

[0069] Such as Figure 8 As shown, AlN layers 702, 704 were then face-to-face bonded using a Karl Suss SB6VAC wafer bonder at...

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Abstract

A method of producing a silicon-on-insulator article is provided. The method includes: forming a first aluminium nitride layer thermally coupled to a first silicon substrate; forming a second aluminium nitride layer thermally coupled to a second substrate, the second substrate including at least a surface layer of silicon; bonding the first and second aluminium nitride layers of the first and second substrates together so that the first and second aluminium nitride layers are disposed between the first and second substrates; and removing most of the second substrate to leave a layer of silicon that is electrically insulated from but thermally coupled to the first silicon substrate by the first and second aluminium nitride layers.

Description

technical field [0001] The present invention relates to semiconductor manufacturing, and in particular to silicon-on-insulator (SOI) articles or products that can be used to manufacture semiconductor devices, and methods of manufacturing SOI articles or products. Background technique [0002] The term "silicon-on-insulator" or "SOI" generally refers to a compound semiconductor article or product consisting of a thin layer of silicon attached to or supported by an insulating layer or substrate, and also to a compound semiconductor article or product based on such a product. technology. Because of their raw material for subsequent processing, such articles are often referred to in the art as "substrates" and are typically provided in standard wafer form so that they can be used with standard semiconductor manufacturing devices and processes. [0003] SOI substrates can be fabricated by a number of different methods, including direct deposition or epitaxial growth of silicon f...

Claims

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Application Information

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IPC IPC(8): H01L21/84H01L21/20
CPCH01L21/76254H01L21/84H01L21/2007H01L29/78603H01L21/76262H01L27/1203H01L21/76251
Inventor 安德鲁·约翰·布劳利佩塔尔·布兰科·阿塔纳茨科维奇安德鲁·约翰·布莱克林永超
Owner SILANNA GRP
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