Germanium-silicon heterojunction bipolar transistor single event effect resisting strengthening method based on simulation

Abstract

The invention relates to a germanium-silicon heterojunction bipolar transistor single event effect resisting strengthening method based on simulation. The method comprises the steps that a three-dimensional damage model is built, key electrical parameters of the model are calibrated, through the designed radiation resisting strengthening method, a device collector-substrate junction is extended, a fake collector is introduced, a single ion incident device is simulated through SRIM software, the change of a linear energy transmission value along with the device depth is obtained, a linear energy transmission value file is compiled, a device model is embedded, the typical incident position of ions is selected, single event effect simulation of a strengthened device model and single event effect simulation of a non-strengthened device model are carried out respectively, the device model obtained before strengthening is adopted as the reference and is compared with the single event response of the strengthened device model, and the radiation resisting strengthening effect of a germanium-silicon heterojunction bipolar transistor is verified. According to the method, the problems that a ground simulation test cost is high and the machine hour is tense are solved; the single event effect resisting capacity of the germanium-silicon heterojunction bipolar transistor is effectively improved, and meanwhile the defects that the process experiment cost is high and the period is long are overcome.

Description

technical field [0001] The invention relates to a semiconductor device anti-single event effect reinforcement method, in particular to a simulation-based anti-single event effect reinforcement method, which belongs to the technical field of microelectronics and the field of anti-radiation reinforcement technology. Background technique [0002] Semiconductor process and device simulation tool (TCAD) is an effective means to simulate semiconductor process conditions and device layout structure through computer simulation technology. With the continuous development of the research on the radiation effect of semiconductor devices, the computer simulation method that combines device simulation tools with particle transport simulation calculations has solved the problems of high cost and short machine time for ground simulation tests, and can make up for the high cost of process experiments And the shortcoming of long cycle. [0003] Single Event Effects (SEE) are microelectronic...

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These reinforcement technologies often need to change the process flow, the co

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