Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

AlN thin film grown on W substrate and preparation method and application of AlN thin film

A thin film and substrate technology, applied in the field of AlN thin film and its preparation, can solve the problems affecting the quality of epitaxial thin film growth, unstable chemical properties of metal W substrate, difficulty in thin film epitaxy, etc., to improve internal quantum efficiency and current distribution. Uniform and improved luminous efficiency

Inactive Publication Date: 2014-11-12
SOUTH CHINA UNIV OF TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the chemical properties of the metal W substrate are unstable at high temperatures. When the epitaxial temperature is higher than 600 ° C, the interface reaction between the epitaxial nitride and the metal substrate will seriously affect the quality of the epitaxial film growth.
Pioneering researcher and well-known scientist Akasaki et al. have tried to apply traditional MOCVD or MBE technology to directly epitaxially grow nitrides on substrate materials with variable chemical properties. difficulty

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • AlN thin film grown on W substrate and preparation method and application of AlN thin film
  • AlN thin film grown on W substrate and preparation method and application of AlN thin film
  • AlN thin film grown on W substrate and preparation method and application of AlN thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The preparation method of the AlN thin film grown on the W substrate of the present embodiment comprises the following steps:

[0041] (1) Selection of the substrate and its crystal orientation: the (110) plane of the W substrate is used as the epitaxial plane, and the crystal epitaxial orientation relationship: AlN[11-20] / / W[001];

[0042] (2) Carrying out surface polishing, cleaning and annealing treatment to the substrate;

[0043] The surface polishing is specifically:

[0044] The surface of the W substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing;

[0045] The cleaning is specifically:

[0046] Put the W substrate in deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the sticky particles on the surface of the W substrate, then wash it with hydrochloric acid, acet...

Embodiment 2

[0057] The preparation method of the AlN thin film grown on the W substrate of the present embodiment comprises the following steps:

[0058] (1) Selection of the substrate and its crystal orientation: the (110) plane of the W substrate is used as the epitaxial plane, and the crystal epitaxial orientation relationship: AlN[11-20] / / W[001];

[0059] (2) Carrying out surface polishing, cleaning and annealing treatment to the substrate;

[0060] The surface polishing is specifically:

[0061] The surface of the W substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing;

[0062] The cleaning is specifically:

[0063] Put the W substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the substrate, then wash it with hydrochloric acid, aceton...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an AlN thin film grown on a W substrate. The AlN thin film comprises the W substrate and an AlN thin film body, wherein the W substrate and the AlN thin film body are sequentially arranged from bottom to top, the AlN thin film body is an AlN thin film body grown at 400-500 DEG C, and the W substrate adopts the surface (110) as the epitaxial surface. The invention further discloses a preparation method and application of the AlN thin film grown on the W substrate. The prepared AlN thin film has the advantages of being low in defect density, good in crystal quality and the like, and the preparation method has the advantages of being simple in growth process and low in preparation cost.

Description

technical field [0001] The invention relates to an AlN thin film and a preparation method thereof, in particular to an AlN thin film grown on a W substrate, a preparation method and an application thereof. Background technique [0002] As a new type of solid-state lighting source and green light source, light diode (LED) has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00H01L33/36
CPCH01L33/12H01L33/007H01L33/16
Inventor 李国强刘作莲王文樑杨为家林云昊周仕忠钱慧荣
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com