Quaternary relaxation piezoelectric single crystal material and growing method thereof

A piezoelectric single crystal, quaternary system technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the limited application range, only 75 ℃ and 70 ℃, PMN-PT and PZN-PT Low phase transition temperature and other issues, to achieve the effect of wide application prospects, small electromechanical coupling performance, and superior piezoelectricity

Active Publication Date: 2014-11-19
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although the relaxor ferroelectric single crystal PMN-PT and PZN-PT have exceptionally excellent piezoelectric properties, they also have their own shortcomings. The phase transition temperatures of PMN-PT and

Method used

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  • Quaternary relaxation piezoelectric single crystal material and growing method thereof
  • Quaternary relaxation piezoelectric single crystal material and growing method thereof

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Example Embodiment

[0023] Example 1

[0024] The high-purity raw material Bi 2 O 3 , MgO, Nb 2 O 5 , In 2 O 3 , TiO 2 and Al 2 O 3 According to the chemical formula 0.36Pb (Mg 1 / 3 Nb 2 / 3 )O 3 -0.25Pb(In 1 / 2 Nb 1 / 2 )O 3 -0.07BiAlO 3 -0.32PbTiO 3 After the stoichiometric ratio of the ingredients is mixed uniformly, it is kept at a temperature of 1100 ° C for 10 hours, and then mixed with the PbO weighed according to the stoichiometric ratio, and then pre-fired again at a temperature of 900 ° C for 2 hours under the condition of holding the temperature. The mixing is briqueted by cold isostatic pressing. The briquette is placed in a cylindrical platinum crucible together with the selected seed crystal with an orientation of (111). The crucible is sealed and placed in the crucible descending furnace for crystal growth. Continue to heat up to 1350 °C for 10 h to melt the starting material, and adjust the crucible position to melt the top of the seed crystal. The temperature gradient ...

Example Embodiment

[0025] Example 2

[0026] The high-purity raw material Bi 2 O 3 , MgO, Nb 2 O 5 , In 2 O 3 , TiO 2 and Al 2 O 3 According to the chemical formula 0.20Pb (Mg 1 / 3 Nb 2 / 3 )O 3 -0.39Pb(In 1 / 2 Nb 1 / 2 )O 3 -0.12BiAlO 3 -0.29PbTiO 3 After the stoichiometric ratio ingredients are evenly mixed, they are kept at a temperature of 1000 ° C for 12 hours, and then mixed with the Pb weighed in stoichiometric ratio. 3 O 4 After mixing, briquetting was performed by cold isostatic pressing. The briquette is placed in a rectangular platinum crucible together with the selected seed crystal with an orientation of (110). The crucible is sealed and placed in the crucible descending furnace for crystal growth. The temperature is kept at 1200 ° C for 8 hours, and then the temperature is continued. Keep the temperature at 1370 °C for 6 h to melt the starting material, and adjust the position of the crucible to melt the top of the seed crystal. The temperature gradient of the growth in...

Example Embodiment

[0027] Example 3

[0028] The high-purity raw material Bi 2 O 3 , MgO, Nb 2 O 5 , In 2 O 3 , TiO 2 and Al 2 O 3 According to the chemical formula 0.30Pb (Mg 1 / 3 Nb 2 / 3 )O 3 -0.21Pb(In 1 / 2 Nb 1 / 2 )O 3 -0.28BiAlO 3 -0.21PbTiO 3 After the stoichiometric ratio ingredients are evenly mixed, keep at a temperature of 1100 ° C for 9 hours, and then mix with PbO and Pb in a 1:1 molar ratio weighed according to the stoichiometric ratio. 3 O 4 After mixing, it is pressed and formed by a powder tablet machine, and the briquette is placed in a cylindrical iridium crucible together with the selected seed crystal with an orientation of (100), and the crucible is sealed and placed in a crucible descending furnace for crystal growth. , pass argon into the furnace for protection, first raise the furnace temperature to 1200 °C for 3 hours, and then continue to heat up to 1400 °C for 6 hours to melt the starting material, and adjust the crucible position to melt the top of the se...

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Abstract

The invention discloses a quaternary relaxation piezoelectric single crystal material and a growing method thereof. The chemical formula of the single crystal material is xPb(Mg1/3Nb2/3)O3-yPb(In1/2Nb1/2)O3-zBiAlO3-(1-x-y-z)PbTiO3, wherein x is more than 0 and less than 1; y is more than 0 and less than 1; z is more than 0 and less than 1; x+y+z is less than 1. The growing method comprises the following steps: weighing the oxide raw materials except lead and presintering the oxide raw materials under high temperature; mixing the presintered materials with the oxide of lead and briquetting the mixture; then carrying out insulation at 500-1250 DEG C for 3-20 hours, continuously raising the temperature to 1340-1410 DEG C, carrying out insulation for 3-15 hours to melt all the starting materials and cooling at a speed of 0.1-1.2mm/h to gradually carry out crystallization, wherein the interface temperature gradient is 20-100 DEG C/cm; after growth is completed, cooling the crystals to the room temperature at a speed of 10-300 DEG C/h. The method can be adopted to grow piezoelectric crystals with different orientations, shapes and dimensions according to the requirements, has the advantages of simple process equipment, convenience in operation, productivity with one furnace and the like and is suitable for large-scale industrial growth or production of crystals.

Description

technical field [0001] The invention belongs to the field of piezoelectric crystal materials, in particular to a quaternary piezoelectric single crystal related to PMN-PIN-PT and a growth method thereof. Background technique [0002] Piezoelectric materials are important functional materials that use the piezoelectric effect to realize the direct mutual conversion between electrical energy and mechanical energy. It is an important component of electronic components such as filters, transducers, sensors, piezoelectric transformers, etc., and has become one of the main research directions of high-tech in the 21st century. The binary piezoelectric ceramic lead zirconate titanate (PZT) has been widely used for a long time due to its high Curie temperature and stable performance. However, with the continuous development of science and technology, the production of various high-performance and high-precision instruments has put forward higher requirements for the performance of p...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B11/00H01L41/187
Inventor 刘锦峰许桂生杨丹凤刘莹
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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