Plasma texturing method of AZO film of film solar cell

A solar cell and plasma technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inconspicuous texturing effect, limited particle energy, environmental pollution, etc., to improve the light trap effect and improve controllability Effect

Inactive Publication Date: 2014-12-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Wet etching has the advantages of large-area substrate processing and fast etching speed. However, because the etching speed is too fast, it is not easy to control the etching process. At the same time, the use of acid...

Method used

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  • Plasma texturing method of AZO film of film solar cell
  • Plasma texturing method of AZO film of film solar cell
  • Plasma texturing method of AZO film of film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] For the AZO glass substrate, first rinse with decontamination powder and water until there are no air bubbles; then rinse with acetone, then rinse with 95% ethanol, and ultrasonically clean with ethanol solution for 20 minutes; finally rinse with deionized water, and use Ultrasonic cleaning with deionized water for 20 minutes, and then drying with high-purity nitrogen, set aside.

[0036] Send the cleaned AZO glass substrate to the sampling chamber, and send the substrate to the substrate holder in the reaction chamber of the plasma etching device through the sampling chamber; turn on the heating power supply, heat the substrate holder, and keep heating The temperature is 200°C; the vacuum of the reaction chamber is evacuated to 1.5×10 -4 Pa; Introduce nitrogen and hydrogen, the flow rates are 8sccm and 2.5sccm respectively; adjust the working pressure of the reaction chamber to keep it at 3Pa; turn on the radio frequency power supply, preheat for 5 minutes, set the fre...

Embodiment 2

[0039] The cleaning of the AZO glass substrate adopts the method of embodiment one; the AZO glass substrate cleaned up is sent to the sample introduction chamber, and the substrate is sent to the substrate holder of the reaction chamber of the plasma etching device through the sample introduction chamber; Heating the power supply, heating the substrate rack, and keeping the heating temperature at 200°C; pumping the vacuum of the reaction chamber to 1.5×10 -4 Pa; Introduce nitrogen and hydrogen, the flow rates are 8sccm and 2.5sccm respectively; adjust the working pressure of the reaction chamber to keep it at 3Pa; turn on the radio frequency power supply, preheat for 5 minutes, set the frequency and power to 456KHz and 1800W respectively; adjust the radio frequency Match until the ignition generates plasma; continue to feed the above-mentioned nitrogen and hydrogen, and keep heating the substrate holder at 200 ° C, and start timing at the same time; after 10 minutes, turn off t...

Embodiment 3

[0042]The cleaning of the AZO glass substrate adopts the method of embodiment one; the AZO glass substrate cleaned up is sent to the sample introduction chamber, and the substrate is sent to the substrate holder of the reaction chamber of the plasma etching device through the sample introduction chamber; Heating the power supply, heating the substrate rack, and keeping the heating temperature at 200°C; pumping the vacuum of the reaction chamber to 1.5×10 -4 Pa; feed nitrogen and hydrogen, the flow rates are 7sccm and 3sccm respectively; adjust the working pressure of the reaction chamber to keep it at 3Pa; turn on the RF power supply, preheat for 5 minutes, set the frequency and power to 456KHz and 1200W respectively; adjust the RF matching , until the plasma is generated by the glow; continue to feed the above-mentioned nitrogen and hydrogen, and keep heating the substrate holder at 200 ° C, and start timing at the same time; after 10 minutes, turn off the radio frequency powe...

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Abstract

The invention relates to the field of semiconductor industry, and in particular relates to a plasma texturing method of an AZO film of a film solar cell. The method is characterized in that the advantages of physical etching and chemical etching of the plasma etching method and high regulation performance of the etching degree and other advantages are utilized to etch the AZO film of the film solar cell. With the adoption of the method, the effect of wet etching can be reached; meanwhile, any corrosive solution is not used, so that the environmental pollution caused by improper handling of reaction solution can be avoided; the heating temperature, flow rate of inlet air, power and frequency of a radio source, and etching time of a substrate rack are controlled to improve the etching controllability; compared with the sputtering-depositing texturing type AZO film of which the particle energy is limited and obvious texturing effect is not reached, the AZO film has the advantage that a good etching effect can be reached; the texturing method of the AZO film of the film solar cell has the advantages of being high in light trapping structure effect, high in etching controllability and free of pollution; therefore, the method can be applied to the technology for improving the converting efficiency of a solar cell.

Description

technical field [0001] The invention relates to the field of semiconductor industry, especially solar cells, in particular to a plasma texturing method for AZO thin films of thin-film solar cells. Background technique [0002] With the intensification of energy shortage and environmental pollution, all countries are stepping up the pace of development of the photovoltaic industry. At present, in order to solve the problems of high cost and low efficiency of solar cells, various new processes and technologies are applied to the preparation of cells. In the technology of improving the conversion efficiency of solar cells, optical optimization is an important optimization technology, and its purpose is to increase the incident light intensity or photon flux inside the solar cell. Increasing photon flux means that solar cells can use incident photons more effectively, increase photogenerated current, achieve higher conversion efficiency, and reduce the cost of photovoltaic powe...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 周海平常小幻向勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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