Perovskite solar cell with hole transport system free of ionic additive

A technology of solar cells and hole transport layers, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of easy moisture absorption, damage to the lattice structure, affecting battery life, etc., to avoid the influence of water molecules and improve the device. Effects of stability, high hole mobility

CN104201285AInactive Publication Date: 2014-12-10PEKING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2014-12-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a perovskite solar cell with a hole transport system free of ionic additive. The perovskite solar cell comprises a substrate, a transparent electrode, an electron transport layer, a light absorbing layer, a hole transport layer and a top electrode, all of which are orderly stacked on each other, wherein the light absorbing layer is made of a photovoltaic material with a perovskite structure; the hole transport layer contains no ionic additive, and instead, is doped or interface-modified by use of a non-ionic material. The perovskite solar cell with the hole transport system free of ionic additive has the advantages that the hole transport material is doped or interface-modified by use of a common non-ionic p type doping material and a similar effect to an ionic additive can be achieved, and meanwhile, the influence of water molecule can be effectively avoided and the stability of a device can be improved.
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Description

technical field

[0001] The invention belongs to the field of perovskite solar cells (PSC, Perovskite Solar Cells), in particular to a perovskite solar cell without ion additives and a preparation method thereof. Background technique

[0002] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or photochemical effect, also known as a photovoltaic cell. Perovskite solar cells are currently a relatively new type of solar cells, mainly using similar ABX 3 (A=CH 3 NH 3 + etc.; B=Pb 2+ ,Sn 2+ etc.; X=Cl - ,Br - , I - etc.) photovoltaic materials with a perovskite structure to realize photoelectric conversion, which has the advantages of simple manufacturing process, wide source of raw materials, and low cost. The basic structure of perovskite solar cells includes substrates, transparent electrodes, electron transport materials, light absorbing layers of perovskite materials, hole transport materials and meta...

Examples

Embodiment 1

[0031] Example 1: Non-ionic additive perovskite solar cells prepared by solution method

[0032] For the preparation of device functional layers, see figure 1 , mainly including various functional layers stacked on the substrate and the transparent electrode 1 : electron transport layer 2 , light absorbing layer 3 , hole transport layer 4 , and metal electrode 5 . The preparation process is as follows:

[0033] 1) FTO conductive glass is used as the substrate and transparent electrode 1, with a thickness of 2-5 mm and a surface resistance of less than 50 ohms;

[0034]2) Coat the substrate and the transparent electrode 1 with a 0.15-0.3 M bis(acetylacetonate) diisopropyl titanate (titaniumdiisopropoxidebis(acetylacetonate)) precursor solution by spin coating method, and place it in a muffle furnace at 350 ℃~500℃ high temperature sintering for 30min~90min to obtain TiO with a thickness of about 10~100nm 2 Dense film as electron transport layer 2;

[0035] 3) The light-absor...

Embodiment 2

[0045] Embodiment 2: there is non-ionic additive perovskite solar cell prepared by evaporation method

[0046] For the preparation of device functional layers, see figure 1 , mainly including various functional layers stacked on the substrate and the transparent electrode 1 : electron transport layer 2 , light absorbing layer 3 , hole transport layer 4 , and metal electrode 5 . The preparation process is as follows:

[0047] 1) FTO conductive glass is used as the substrate and transparent electrode 1, with a thickness of 2-5 mm and a surface resistance of less than 50 ohms;

[0048] 2) Coat the substrate and the transparent electrode 1 with a 0.15-0.3 M bis(acetylacetonate) diisopropyl titanate (titaniumdiisopropoxidebis(acetylacetonate)) precursor solution by spin coating method, and place it in a muffle furnace at 350 ℃~500℃ high temperature sintering for 30min~90min to obtain TiO with a thickness of about 10~100nm 2 Dense film as electron transport layer 2;

[0049] 3) ...