Cu-Mn alloy film, Cu-Mn alloy sputtering target material and Cu-Mn alloy film manufacturing method
A film forming method and sputtering target technology, which are applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problem that Mo film or Mo alloy film is prone to cracks and cannot fully maintain protection. The effect of Cu film on the wiring film, the inability to ensure the adhesion of the substrate, etc., to achieve the effect of improving the display quality
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Embodiment 1
[0051] First, a sputtering target for forming a Cu-Mn alloy film is produced. It was weighed so that the atomic ratio was 80 atomic % Mn—Cu, melted and casted in a vacuum melting furnace to produce an ingot. Then, machining was performed on this ingot to produce a sputtering target with a diameter of 100 mm and a thickness of 5 mm.
[0052] In addition, about the Al sputtering target material for forming the Al film which is a comparative example, the Al sputtering target material manufactured by Sumitomo Chemical Co., Ltd. was purchased and prepared. Moreover, about the Cu sputtering target material for forming the Cu film which is a comparative example, the oxygen-free copper (OFC) raw material manufactured by Hitachi Cable, Ltd. was processed, and the Cu sputtering target material was produced. Moreover, about the Mo sputtering target material for forming the Mo film which is a comparative example, the Mo powder of purity 4N was press-sintered, and the Mo sputtering target...
Embodiment 2
[0061] Measured in the air atmosphere to the sample number 1, number 5, number 6, number 7 in the sample of embodiment 1 when carrying out 225 ℃, 250 ℃, 300 ℃ heat treatment of Cu-Mn alloy film time Reflectance, the results are shown in Table 2. In addition, the mark * in Table 2 shows that it is out of the scope of the present invention.
[0062] [Table 2]
[0063]
[0064] As shown in Table 2, it was confirmed that the reflectance of the Cu—Mn alloy film was further lowered when the heating temperature in the air atmosphere was 225° C. than 200° C. shown in Table 1 . On the other hand, it was confirmed that when the heating temperature in the air atmosphere was 250° C., the reflectance of the Cu—Mn alloy film exceeded 30%, which greatly increased. Therefore, it was confirmed that in order to obtain the Cu-Mn alloy film of the present invention, the heating temperature of the Cu-Mn alloy film in the air atmosphere is preferably 200 to 225°C.
Embodiment 3
[0066] In order to produce a sputtering target of Cu-34 atomic % Mn in atomic ratio, atomized powders having the same composition were prepared and classified using a 100-mesh sieve to obtain Cu-Mn alloy powder with an average particle diameter of 70 μm. As a result of chemical analysis of this Cu-Mn alloy powder, the purity was confirmed to be 99.9%.
[0067] Next, it was filled into a mild steel container having a cylindrical inner diameter of 133 mm x a height of 30 mm and a thickness of 3 mm, and was heated at 450° C. for 5 hours to perform degassing treatment. Thereafter, the mild steel container was sealed, and sintered using a HIP apparatus under the conditions of a sintering temperature of 800° C., an applied pressure of 118 MPa, and a sintering time of 5 hours.
[0068] After cooling, it was taken out from the HIP device, and the mild steel container was removed by machining to obtain a Cu-Mn alloy sputtering target of the present invention with a diameter of 100 mm a...
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