ZnO-based sputtering target and photovoltaic cell having passivation layer deposited using the same

A photovoltaic cell and sputtering target technology, which is applied in photovoltaic power generation, sputtering coating, coating, etc., can solve the problems of photovoltaic cell efficiency reduction, achieve the effects of improving uniformity, reducing interface diffusion, and improving efficiency

Inactive Publication Date: 2014-12-17
SAMSUNG CORNING ADVANCED GLASS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the composition of the light absorbing layer is changed in this way, the efficiency of the photovoltaic cell must decrease

Method used

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  • ZnO-based sputtering target and photovoltaic cell having passivation layer deposited using the same
  • ZnO-based sputtering target and photovoltaic cell having passivation layer deposited using the same

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Embodiment 1

[0045] A buffer layer is formed by depositing cadmium sulfide (CdS) on a light absorbing layer made of copper indium gallium selenide (CIGS) compound. A passivation layer was formed on the buffer layer by direct current (DC) sputtering using a gallium oxide doped zinc oxide (GZO) target. A transparent electrode (TCO) was formed on the passivation layer by DC sputtering using a Ga-Al-Zn-O (GAZO) target. Then, the properties of the resulting structures were analyzed.

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Abstract

A zinc oxide (ZnO)-based sputtering target which is available for DC sputtering and a photovoltaic cell having a passivation layer deposited using the same. The ZnO-based sputtering target includes a sintered body made of ZnO, the ZnO being doped with 10 to 60% by weight gallium oxide, and a backing plate bonded to the rear surface of the sintered body to support the sintered body. The passivation layer can prevent a change in the composition of the light-absorbing layer from lowering an efficiency.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0060477 filed on May 28, 2013, the entire contents of which are hereby incorporated by reference for all purposes. technical field [0003] The present application relates to zinc oxide (ZnO) based sputtering targets and photovoltaic cells having passivation layers deposited using said sputtering targets, and more particularly to ZnO based sputtering targets suitable for direct current (DC) sputtering and having A photovoltaic cell using the passivation layer deposited by the ZnO-based sputtering target, wherein the passivation layer can prevent compositional changes of the light absorbing layer from reducing efficiency. Background technique [0004] Recently, as a countermeasure against energy scarcity and environmental pollution, the development of high-efficiency photovoltaic cells is being carried out on a large scale. Photovoltaic cells a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08H01L31/0352
CPCH01L31/02167C04B35/01C04B35/453C04B37/026C04B2235/3284C04B2235/3286C04B2235/786C04B2235/96C04B2237/34C04B2237/403C04B2237/406C04B2237/407C23C14/086C23C14/3414Y02E10/50C23C14/34H01L31/04
Inventor 李伦圭高榥庸朴柱玉徐寿莹
Owner SAMSUNG CORNING ADVANCED GLASS LLC
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