Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

ZnO-based sputtering target and photovoltaic cell having passivation layer deposited using the same

A photovoltaic cell and sputtering target technology, which is applied in photovoltaic power generation, sputtering coating, coating, etc., can solve the problems of photovoltaic cell efficiency reduction, achieve the effects of improving uniformity, reducing interface diffusion, and improving efficiency

Inactive Publication Date: 2014-12-17
SAMSUNG CORNING ADVANCED GLASS LLC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the composition of the light absorbing layer is changed in this way, the efficiency of the photovoltaic cell must decrease

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ZnO-based sputtering target and photovoltaic cell having passivation layer deposited using the same
  • ZnO-based sputtering target and photovoltaic cell having passivation layer deposited using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A buffer layer is formed by depositing cadmium sulfide (CdS) on a light absorbing layer made of copper indium gallium selenide (CIGS) compound. A passivation layer was formed on the buffer layer by direct current (DC) sputtering using a gallium oxide doped zinc oxide (GZO) target. A transparent electrode (TCO) was formed on the passivation layer by DC sputtering using a Ga-Al-Zn-O (GAZO) target. Then, the properties of the resulting structures were analyzed.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
bending strengthaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

A zinc oxide (ZnO)-based sputtering target which is available for DC sputtering and a photovoltaic cell having a passivation layer deposited using the same. The ZnO-based sputtering target includes a sintered body made of ZnO, the ZnO being doped with 10 to 60% by weight gallium oxide, and a backing plate bonded to the rear surface of the sintered body to support the sintered body. The passivation layer can prevent a change in the composition of the light-absorbing layer from lowering an efficiency.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2013-0060477 filed on May 28, 2013, the entire contents of which are hereby incorporated by reference for all purposes. technical field [0003] The present application relates to zinc oxide (ZnO) based sputtering targets and photovoltaic cells having passivation layers deposited using said sputtering targets, and more particularly to ZnO based sputtering targets suitable for direct current (DC) sputtering and having A photovoltaic cell using the passivation layer deposited by the ZnO-based sputtering target, wherein the passivation layer can prevent compositional changes of the light absorbing layer from reducing efficiency. Background technique [0004] Recently, as a countermeasure against energy scarcity and environmental pollution, the development of high-efficiency photovoltaic cells is being carried out on a large scale. Photovoltaic cells a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08H01L31/0352
CPCH01L31/02167C04B35/01C04B35/453C04B37/026C04B2235/3284C04B2235/3286C04B2235/786C04B2235/96C04B2237/34C04B2237/403C04B2237/406C04B2237/407C23C14/086C23C14/3414Y02E10/50C23C14/34H01L31/04
Inventor 李伦圭高榥庸朴柱玉徐寿莹
Owner SAMSUNG CORNING ADVANCED GLASS LLC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com