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A kind of thin film transistor and its manufacturing method, photolithography process

A thin-film transistor and photolithography technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of complex structure and complex manufacturing process, and achieve the goal of simplifying the lithography process, reducing the manufacturing process, and reducing the manufacturing cost. Effect

Active Publication Date: 2017-05-31
TRULY SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the process of applying the existing photolithography process, each time a film layer or circuit layer is produced, one exposure and one etching are required.
For today's semiconductor-related devices, because the structure of the device is relatively complex, including more film layers or circuit layer structures with patterns, it is necessary to perform multiple photolithography processes and undergo multiple exposure and etching processes. The production process is complicated

Method used

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  • A kind of thin film transistor and its manufacturing method, photolithography process
  • A kind of thin film transistor and its manufacturing method, photolithography process
  • A kind of thin film transistor and its manufacturing method, photolithography process

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Embodiment 1

[0044] This embodiment provides a photolithography process, such as Figure 7 to Figure 9 shown, including the following steps:

[0045] Step 1: If Figure 7 As shown, a substrate 701 is provided, and a film layer A and a film layer B are formed on one surface of the substrate 701 , wherein the film layer B is located between the substrate 701 and the film layer A.

[0046] Step 2: If Figure 8 As shown, a photoresist layer 702 is formed on the surface of the film layer A, and the photoresist layer 702 can be a positive photoresist layer or a negative photoresist layer. The material of the photoresist layer 702 is not limited, and can be selected according to specific needs and process conditions.

[0047] Step 3: If Figure 9 As shown, the photoresist layer 702 is exposed using a half-grayscale mask 703, wherein the half-grayscale mask 703 includes a first region 7031, a second region 7032 and a third region 7033, and The light transmittance of the first region 7031 and ...

Embodiment 2

[0064] This embodiment provides a method for manufacturing a thin film transistor, such as Figure 15 shown, including the following steps:

[0065] Step 1501: providing a substrate, for a thin film transistor, the substrate is a transparent substrate, preferably, the substrate is a glass substrate;

[0066] Step 1502: if Figure 16 As shown, silicon islands 1602 are formed on the surface of the substrate 1601 .

[0067] According to the types of thin film transistors, the types of silicon islands 1602 currently include amorphous silicon islands, polycrystalline silicon islands, and single crystal silicon islands. High efficiency, low power consumption and other advantages, so low-temperature polysilicon thin film transistors are more and more valued by flat-panel display manufacturers, and their applications in smart phone displays are becoming more and more extensive. Therefore, in this embodiment, it is preferable to take a low-temperature polysilicon thin film transisto...

Embodiment 3

[0094] This implementation provides a thin film transistor such as Figure 27 As shown, the thin film transistor is manufactured by the manufacturing method described in the second embodiment. The gate and transparent electrode of this kind of thin film transistor are completed by one photolithography process, so the whole manufacturing process of this kind of thin film transistor only needs to use four photolithography processes, the manufacturing method is simple, and the cost is low.

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Abstract

The invention provides a thin film transistor and a manufacturing method and a photoetching process thereof. The photoetching process comprises the following steps: performing exposure by using a semi-gray-scale mask; and after exposure and development, removing a corresponding film layer A on the first region of the semi-gray-scale mask, a corresponding film layer B on the first region of the semi-gray-scale mask and a corresponding film layer A on the third region of the semi-gray-scale mask in sequence in order to finish etching. According to the photoetching process, the etching requirements of the film layers A and the film layer B can be met by performing one-time exposure on the semi-gray-scale mask, and the procedures of the photoetching process can be reduced, so that the aim of simplifying the photoetching process is fulfilled, and the manufacturing cost is reduced. When the thin film transistor is manufactured by applying the photoetching process, six times of photoetching in a manufacturing process of the thin film transistor can be simplified into four times of photoetching, so that the manufacturing method of the thin film transistor is simplified, and the manufacturing cost of the thin film transistor is reduced.

Description

technical field [0001] The invention belongs to the field of manufacturing semiconductor devices, and in particular relates to a thin film transistor, a manufacturing method thereof, and a photolithography process. Background technique [0002] In the process of manufacturing semiconductor devices, photolithography technology is generally involved. Photolithography technology is the basis for constructing a film layer or circuit layer with a preset pattern on a flat substrate. [0003] Photolithography technology includes many steps and processes in the actual production process: first, a complete film layer or circuit layer is formed on a flat substrate, and a photoresist layer is formed on the surface of the complete film layer or circuit layer; followed by exposure Operation, let the strong light shine on the substrate through a patterned hollow mask (MASK). If the photoresist layer is a positive photoresist layer, the part of the photoresist layer that is irradiated by t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/027H01L21/30H01L21/336
CPCH01L21/0274H01L29/401H01L29/66757H01L29/78675
Inventor 肖双喜任思雨于春崎胡君文何基强李建华
Owner TRULY SEMICON
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