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Thermoelectric materials capable of inhibiting Cu ion migration and methods for inhibiting Cu ion migration in Cu-based thermoelectric materials

A technology of thermoelectric materials and atoms, applied in chemical instruments and methods, elemental compounds other than selenium/tellurium, selenium/tellurium compounds, etc., can solve problems such as the inability to solve the problem of Cu ion migration, and facilitate large-scale batch production The effect of preparation, reduction of Cu ion mobility, and low cost

Active Publication Date: 2016-05-18
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the 1960s, the US 3M Company and NASA Jet Propulsion Laboratory proposed the use of Cu 2- m X-based thermoelectric devices replaced traditional SiGe materials to provide power for deep space exploration satellites. However, after two decades of research, it was found that the above-mentioned Cu ion migration problem under the action of high current could not be solved, which eventually led to the termination of the project (Thermoelectric generator testing and RTG degradation mechanism sevaluation .ProgressreportNo.SAN-0959-T2, DOI: 10.2172 / 5531078)
So far, in Cu 2-m Among X (X=S or Se) materials, there is no published report showing that Cu ion migration under high current can be successfully and effectively suppressed.

Method used

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  • Thermoelectric materials capable of inhibiting Cu ion migration and methods for inhibiting Cu ion migration in Cu-based thermoelectric materials
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  • Thermoelectric materials capable of inhibiting Cu ion migration and methods for inhibiting Cu ion migration in Cu-based thermoelectric materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Cu 2-m-n Fe n S(m=0.02,n=0.01) material

[0039] The metal raw materials Cu, Fe, and S are dosed according to the molar ratio of 1.97:0.01:1, and the raw materials are sealed into a quartz tube. While drawing a vacuum, they are packaged with an argon plasma flame, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were melted at 1000° C. for 30 hours. Cool to room temperature after melting is complete. The melted quartz tube was annealed at 600°C for 120 hours, and the obtained block was ground into fine powder, followed by spark plasma sintering. The sintering temperature was 400°C, the holding time was 5 minutes, and the pressure was 50MPa. as attached image 3 As shown, at a temperature of 573K, for Cu 1.97 Fe 0.01 S samples apply a large current (12A / cm 2 ) observed after the change of resistance shows that the range of resistance change is significantly slower than that of Cu 2 S sample. This shows that thro...

Embodiment 2

[0041] Cu 2-m-n Ni n S (m=0.02, n=0.02) material

[0042] The metal raw materials Cu, Ni, and S are mixed according to the molar ratio of 1.96:0.02:1, and the raw materials are sealed into the quartz tube, and the vacuum is drawn while using the argon plasma flame to seal, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were melted at 1000° C. for 30 hours. Cool to room temperature after melting is complete. The fused quartz tube was annealed at 550°C for 120 hours, and the obtained block was ground into fine powder, followed by spark plasma sintering. The sintering temperature was 400°C, the holding time was 5 minutes, and the pressure was 50MPa. as attached Figure 4 As shown, at a temperature of 573K, for Cu 1.96 Ni 0.02 S samples apply a large current (12A / cm 2 ) observed after the change of resistance shows that the range of resistance change is significantly slower than that of Cu 2 S, and during the entire meas...

Embodiment 3

[0044] Cu 2-m-n Fe n S(m=0.5,n=0.25) material

[0045] The metal raw materials Cu, Fe, and S are dosed according to the molar ratio of 1.25:0.25:1, and the raw materials are sealed into the quartz tube. While drawing the vacuum, they are packaged with an argon plasma flame, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were melted at 1000° C. for 30 hours. Cool to room temperature after melting is complete. The melted quartz tube was annealed at 600°C for 120 hours, and the obtained block was ground into fine powder, followed by spark plasma sintering. The sintering temperature was 400°C, the holding time was 5 minutes, and the pressure was 50MPa. Such as Figure 5 As shown, at a temperature of 573K, for Cu 1.25 Fe 0.25 S samples apply a large current (12A / cm 2 ) observed after the change of resistance shows that the range of resistance change is significantly slower than that of Cu 2 S. After 1,000 seconds of high...

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Abstract

The invention relates to a thermoelectric material capable of inhibiting Cu ion migration and a method for inhibiting Cu ion migration in a Cu-base thermoelectric material. The chemical composition of the thermoelectric material is Cu[2-m-n]TnX, wherein X is S or Se, T is an immovable transition metal element under the action of heavy current, 0<=m<=1, and 0<n<=0.5.

Description

technical field [0001] The present invention relates to the field of thermoelectric materials, in particular to a novel high-performance Cu-based thermoelectric material capable of inhibiting the migration of Cu ions and a preparation method thereof, and also to a method for improving the stability of Cu-based thermoelectric materials, more specifically, to a A method to suppress the migration of Cu ions in Cu-based materials under the action of high current. Background technique [0002] As a new type of renewable clean energy technology, thermoelectric conversion technology has attracted extensive attention in the world in recent years. It uses the Seebeck effect of semiconductor materials to directly convert heat energy and electric energy into each other. It has the characteristics of long life, high reliability, environmental friendliness, wide temperature range, and effective use of low-density energy. It is used in industrial waste heat and automobiles. Recycling of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G3/12C01G49/12C01B19/00
CPCC01B19/002C01G3/12C01G49/00C01P2006/40
Inventor 仇鹏飞史迅陈立东张天松
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI