Thermoelectric materials capable of inhibiting Cu ion migration and methods for inhibiting Cu ion migration in Cu-based thermoelectric materials
A technology of thermoelectric materials and atoms, applied in chemical instruments and methods, elemental compounds other than selenium/tellurium, selenium/tellurium compounds, etc., can solve problems such as the inability to solve the problem of Cu ion migration, and facilitate large-scale batch production The effect of preparation, reduction of Cu ion mobility, and low cost
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Embodiment 1
[0038] Cu 2-m-n Fe n S(m=0.02,n=0.01) material
[0039] The metal raw materials Cu, Fe, and S are dosed according to the molar ratio of 1.97:0.01:1, and the raw materials are sealed into a quartz tube. While drawing a vacuum, they are packaged with an argon plasma flame, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were melted at 1000° C. for 30 hours. Cool to room temperature after melting is complete. The melted quartz tube was annealed at 600°C for 120 hours, and the obtained block was ground into fine powder, followed by spark plasma sintering. The sintering temperature was 400°C, the holding time was 5 minutes, and the pressure was 50MPa. as attached image 3 As shown, at a temperature of 573K, for Cu 1.97 Fe 0.01 S samples apply a large current (12A / cm 2 ) observed after the change of resistance shows that the range of resistance change is significantly slower than that of Cu 2 S sample. This shows that thro...
Embodiment 2
[0041] Cu 2-m-n Ni n S (m=0.02, n=0.02) material
[0042] The metal raw materials Cu, Ni, and S are mixed according to the molar ratio of 1.96:0.02:1, and the raw materials are sealed into the quartz tube, and the vacuum is drawn while using the argon plasma flame to seal, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were melted at 1000° C. for 30 hours. Cool to room temperature after melting is complete. The fused quartz tube was annealed at 550°C for 120 hours, and the obtained block was ground into fine powder, followed by spark plasma sintering. The sintering temperature was 400°C, the holding time was 5 minutes, and the pressure was 50MPa. as attached Figure 4 As shown, at a temperature of 573K, for Cu 1.96 Ni 0.02 S samples apply a large current (12A / cm 2 ) observed after the change of resistance shows that the range of resistance change is significantly slower than that of Cu 2 S, and during the entire meas...
Embodiment 3
[0044] Cu 2-m-n Fe n S(m=0.5,n=0.25) material
[0045] The metal raw materials Cu, Fe, and S are dosed according to the molar ratio of 1.25:0.25:1, and the raw materials are sealed into the quartz tube. While drawing the vacuum, they are packaged with an argon plasma flame, and the quartz tube is filled with a small amount of Ar gas for protection. The mixed raw materials were melted at 1000° C. for 30 hours. Cool to room temperature after melting is complete. The melted quartz tube was annealed at 600°C for 120 hours, and the obtained block was ground into fine powder, followed by spark plasma sintering. The sintering temperature was 400°C, the holding time was 5 minutes, and the pressure was 50MPa. Such as Figure 5 As shown, at a temperature of 573K, for Cu 1.25 Fe 0.25 S samples apply a large current (12A / cm 2 ) observed after the change of resistance shows that the range of resistance change is significantly slower than that of Cu 2 S. After 1,000 seconds of high...
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