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NiO nanowire ultraviolet light detector and preparation method and application thereof

A nanowire and detector technology, which is applied in the field of semiconductor optoelectronics, can solve the problems affecting the sensitivity and stability of the detector, and achieve the effect of improving sensitivity and stability and increasing the contact area

Inactive Publication Date: 2015-02-04
CHINA UNIV OF PETROLEUM (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the order has been improved, there is less contact with the electrode part, which will inevitably affect the sensitivity and stability of the detector

Method used

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  • NiO nanowire ultraviolet light detector and preparation method and application thereof
  • NiO nanowire ultraviolet light detector and preparation method and application thereof
  • NiO nanowire ultraviolet light detector and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] This embodiment provides a NiO nanowire ultraviolet light detector. Such as Figure 1a with Figure 1b As shown, the ultraviolet photodetector comprises: a base layer 1 made of a silicon wafer, a silicon oxide thin film layer 2 as an insulating layer, an array of NiO nanowires arranged in parallel with the base layer and a silicon oxide thin film layer, as a photosensitive layer 3 , the interdigitated electrode 4, the first lead 5 and the second lead 6 drawn from the interdigitated electrode;

[0072] SiO 2 The film layer 2 is attached parallel to the base layer 1;

[0073] The photosensitive layer 3 and the interdigital electrodes 4 are arranged in parallel on SiO 2 On the film layer 2, the photosensitive layer 3 and the interdigital electrode 4 are in contact with each other, and the photosensitive layer 3 is arranged on the lower layer of the interdigital electrode 4; wherein, the two poles of the interdigital electrode are Ag electrodes, the film thickness is 500...

Embodiment 2

[0088] This embodiment provides a NiO nanowire ultraviolet light detector. Such as figure 2 As shown, the ultraviolet photodetector is a multi-ultraviolet photodetector array composed of block-arrayed NiO nanowires arranged in parallel to the substrate, and a plurality of ultraviolet photodetectors can be prepared on the same substrate at the same time.

[0089] Such as figure 2 As shown, the NiO nanowire ultraviolet photodetector includes: a base layer 1 made of a silicon wafer, a silicon oxide film layer 2 as an insulating layer, and a plurality of NiO nanowires arranged in block arrays parallel to the base layer and the silicon oxide film layer , as the photosensitive layer 3, as the electrode and the interdigitated electrode array 4 that fixes the nanowire at the same time, the first lead 5 and the second lead 6 drawn from the interdigitated electrodes;

[0090] SiO 2 The film layer 2 is attached parallel to the base layer 1;

[0091] The photosensitive layer 3 and t...

Embodiment 3

[0102] This embodiment provides a NiO nanowire ultraviolet light detector. Such as Figure 3a As shown, the NiO nanowire ultraviolet light detector includes: a base layer 1 made of a silicon wafer, a silicon oxide film layer 2 as an insulating layer, and an ordered array of NiO nanowire arrays parallel to the base layer and the silicon oxide film layer, as Photosensitive layer 3, interdigitated electrodes 4, first leads 5 and second leads 6 drawn from the interdigitated electrodes;

[0103] SiO 2 The film layer 2 is attached parallel to the base layer 1;

[0104] The photosensitive layer 3 and the interdigital electrodes 4 are arranged in parallel on SiO 2 On the film layer 2, the photosensitive layer 3 and the interdigital electrode 4 are in contact with each other, and the photosensitive layer 3 is arranged on the upper layer of the interdigital electrode 4; wherein, the two poles of the interdigital electrode are Ag electrodes, and the film thickness is 500nm, and the fi...

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Abstract

The invention provides a NiO nanowire ultraviolet light detector and a preparation method and application thereof. The detector comprises a substrate layer, a SiO2 thin film layer, a photosensitive layer, an interdigital electrode, a first lead wire and a second lead wire. The SiO2 thin film layer is attached to the substrate layer in a parallel manner; the photosensitive layer and the interdigital electrode are arranged on the SiO2 thin film layer in a parallel manner; the photosensitive layer is in contact connection with the interdigital electrode; the photosensitive layer is arranged on the upper layer or the lower layer of the interdigital electrode; the first lead wire and the second lead wire are connected with the two electrodes of the interdigital electrode respectively; and the photosensitive layer is an orderly-arranged NiO nanowire array parallel to the substrate layer. By adopting the large-area and orderly-arranged NiO nanowire array parallel to the substrate layer, the ultraviolet light detector is high in sensitivity and wide in measurement range, can realize ultraviolet light detection in continuous wave band or each wave band, is simple in preparation, low in cost, and easy to carry out industrial production, and has wide prospect in the actual application.

Description

technical field [0001] The invention relates to a NiO nanowire ultraviolet light detector and its preparation method and application, belonging to the field of semiconductor photoelectric technology. Background technique [0002] Ultraviolet light detection has very important applications in environmental monitoring, biological effects, pollution monitoring, secure communication, and space detection. Compared with infrared light detectors, new ultraviolet light detectors have the advantages of strong stability at high temperature and fast response, so they have received extensive attention and research. Traditional semiconductor light sensors, due to their relatively weak sensitivity to ultraviolet light, need to be filtered when making ultraviolet light detectors, which greatly affects their use; people use GaN, BN and diamond and other semiconductors to prepare ultraviolet light detectors. The process is complicated and the cost is high. It is very high, and it is difficu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/18B82Y40/00
CPCB82Y40/00H01L31/0352H01L31/18Y02P70/50
Inventor 相文峰贺卓董佳丽岳义赵昆
Owner CHINA UNIV OF PETROLEUM (BEIJING)
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