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A High Power and Low Polarization Degree 800nm ​​Band Sld Epitaxial Structure

An epitaxial structure, low polarization technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing optical power, limited effect, etc., and achieve the effect of improving output power

Active Publication Date: 2017-10-24
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

In order to improve the output signal-to-noise ratio of the optical detector in the fiber optic gyroscope, the optical power incident on the detector must be increased, and various optical losses in the optical path of the gyroscope can be reduced as much as possible, but this method has a very limited effect. Another One way is to use high power SLD light source

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  • A High Power and Low Polarization Degree 800nm ​​Band Sld Epitaxial Structure

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Embodiment Construction

[0010] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0011] Please refer to figure 1 As shown, a high-power low-polarization 800nm ​​band SLD epitaxial structure includes an N-type buffer layer 12, an N-type lower cladding layer 13, a lower graded layer 14, and an active layer 15 sequentially stacked on an N-type substrate 11. , an upper graded layer 16, a P-type upper cladding layer 17 and a P-type contact layer 18, and the material of the active layer 15 is GaAs (1-x) P x , wherein x is the phosphorus component of the material, and 0.01≤x≤0.08.

[0012] In the high-power and low-polarization 800nm ​​band SLD epitaxial structure provided by the present invention, GaAsP is used as the well layer material of the quantum well structure, and the strain and light-emitting wavelength are adjusted by ...

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Abstract

The invention provides an 800nm-waveband SLD epitaxial structure high in power and low in polarization degree. The 800nm-waveband SLD epitaxial structure comprises an N-type buffering layer 12, an N-type lower coating 13, a lower gradient layer 14, an active layer 15, an upper gradient layer 16, a P-type upper coating 17 and a P-type contact layer 18 which are sequentially stacked on an N-type substrate 11, and the active layer 15 is made by GaAs(1-x)Px, wherein x refers to a material phosphorous component and is larger than or equal to 0.01 and smaller than or equal to 0.08. In the 800nm-waveband SLD epitaxial structure, GaAsP is adopted to form a well layer of a quantum well structure, dependent variable and light emitting wavelength are adjusted by adjusting components of the well layer, and mode gain of a TE mode and the mode gain of a TM mode are enabled to tend to be uniform, so that requirements on low-polarization-degree light output are met, and the light emitting wavelength is exactly 800nm waveband; by adopting the quantum well structure, output power of an SLD can be increased.

Description

technical field [0001] The invention belongs to the field of SLD (Super Luminescent Diode, super luminescent light emitting diode), and specifically relates to an SLD epitaxial structure capable of realizing the emission wavelength of 800nm ​​band, high output power and low polarization degree. Background technique [0002] The performance of SLD is between that of lasers and light-emitting diodes. It has the advantages of short coherence length, low noise and wide spectrum. It is an ideal light source for fiber optic gyroscopes, wavelength division multiplexing, and coherent tomography. The actual SLD light source emits partially polarized light, most of the power is in the horizontal polarization parallel to the semiconductor junction, and under the same driving current, the polarization degree of the light emitted by the light source will fluctuate with the change of the external environment. In the optical fiber Polarization phase errors can result in gyroscopes. The hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/30
CPCH01L33/005H01L33/06H01L33/12H01L2933/0033
Inventor 周勇唐祖荣段利华刘万清刘尚军
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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