A High Power and Low Polarization Degree 800nm Band Sld Epitaxial Structure
An epitaxial structure, low polarization technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing optical power, limited effect, etc., and achieve the effect of improving output power
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[0010] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.
[0011] Please refer to figure 1 As shown, a high-power low-polarization 800nm band SLD epitaxial structure includes an N-type buffer layer 12, an N-type lower cladding layer 13, a lower graded layer 14, and an active layer 15 sequentially stacked on an N-type substrate 11. , an upper graded layer 16, a P-type upper cladding layer 17 and a P-type contact layer 18, and the material of the active layer 15 is GaAs (1-x) P x , wherein x is the phosphorus component of the material, and 0.01≤x≤0.08.
[0012] In the high-power and low-polarization 800nm band SLD epitaxial structure provided by the present invention, GaAsP is used as the well layer material of the quantum well structure, and the strain and light-emitting wavelength are adjusted by ...
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