Method for growing large-size gallium oxide single crystal by pulling method under normal pressure

A technology of gallium oxide and pulling method, which is applied in the direction of chemical instruments and methods, self-melting liquid pulling method, single crystal growth, etc., to achieve the effect of reducing equipment cost, reducing the requirement of high voltage resistance of equipment, and improving safety

Active Publication Date: 2017-03-22
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] For the existing pulling method to grow β-Ga 2 o 3 Crystal technical issues, equipment cost issues, and safety issues, etc., the present invention provides a large-size gallium oxide single crystal growth method, which can effectively inhibit the volatilization and decomposition of gallium oxide present in crystal growth under normal pressure , can rapidly and stably grow high-quality, large-size gallium oxide single crystal

Method used

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  • Method for growing large-size gallium oxide single crystal by pulling method under normal pressure
  • Method for growing large-size gallium oxide single crystal by pulling method under normal pressure
  • Method for growing large-size gallium oxide single crystal by pulling method under normal pressure

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Embodiment 1

[0037] A method for growing a large-sized gallium oxide single crystal by pulling method under normal pressure, the steps are as follows:

[0038] (1) Selection and processing of raw materials

[0039]Use gallium oxide powder with a purity of 99.999%, vacuum-dry at 160°C for 3 hours to remove the water absorbed in the raw material; press the dried raw material into a cylindrical block with a hydraulic press, and put it into a clean iridium crucible;

[0040] (2) Selection of seed crystal

[0041] Choose β-Ga in direction 2 o 3 Seed crystals, cut, ultrasonically cleaned and dried for later use;

[0042] (3) Growth of gallium oxide single crystal by melt pulling method

[0043] Put the iridium gold crucible into the crystal growth furnace, the size of the crucible is Φ60mm×60mm; vacuumize the crystal growth furnace to 1×10 -4 Pa, filled with 1% volume fraction of high-purity oxygen and 99% volume fraction of high-purity carbon dioxide gas to an atmospheric pressure, using ...

Embodiment 2

[0051] A method for growing a large-sized gallium oxide single crystal by pulling method under normal pressure, the steps are as follows:

[0052] (1) Selection and processing of raw materials

[0053] Use gallium oxide powder with a purity of 99.999%, vacuum-dry it at 200°C for 1 hour to remove the water absorbed in the raw material; press the dried raw material into a cylindrical block with a hydraulic press, and put it into a clean iridium crucible;

[0054] (2) Selection of seed crystal

[0055] Choose β-Ga in direction 2 o 3 Seed crystals, cut, ultrasonically cleaned and dried for later use;

[0056] (3) Growth of gallium oxide single crystal by melt pulling method

[0057] Put the iridium gold crucible into the crystal growth furnace, the size of the crucible is Φ60mm×60mm; vacuumize the crystal growth furnace to 1×10 -4 Pa, filled with 1% volume fraction of high-purity oxygen and 99% volume fraction of high-purity carbon dioxide gas to an atmospheric pressure, usi...

Embodiment 3

[0062] A method for growing a large-sized gallium oxide single crystal by pulling method under normal pressure, the steps are as follows:

[0063] (1) Selection and processing of raw materials

[0064] Use gallium oxide powder with a purity of 99.999%, vacuum-dry at 100°C for 3 hours to remove the water absorbed in the raw material; press the dried raw material into a cylindrical block with a hydraulic press, and put it into a clean iridium crucible;

[0065] (2) Selection of seed crystal

[0066] Choose β-Ga in direction 2 o 3 Seed crystals, cut, ultrasonically cleaned and dried for later use;

[0067] (3) Growth of gallium oxide single crystal by melt pulling method

[0068] Put the iridium gold crucible into the crystal growth furnace, the size of the crucible is Φ60mm×60mm; vacuumize the crystal growth furnace to 1×10 -4 Pa, filled with 1% volume fraction of high-purity oxygen and 99% volume fraction of high-purity carbon dioxide gas to an atmospheric pressure, using...

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Abstract

The invention relates to a large size gallium oxide single crystal Czochralski growing method under the normal pressure. The method includes 1, drying gallium oxide powder in vacuo, removing the adsorbed water, pressing to form material blocks, and obtaining gallium oxide blanks; 2, selecting gallium oxide seeds < 010> < 100> or < 001& gt; orientating the seeds, cutting, cleaning through ultrasonic and drying; filling a crucible of a crystal growth furnace with the gallium oxide blanks, evacuating till (1-3) * 10-4Pa, and injecting 1% oxygen and 99% carbon dioxide gas of one atmospheric pressure; heating and melting the gallium oxide blanks by the medium frequency induction heating manner, necking, shouldering, performing constant diameter growth, ending, extracting crystal, and obtaining the large size gallium oxide single crystal. The method adopts mixed gas with proper ratio, an after heater adaptive to the crucible and a heat insulation system, crystal beta-Ga2O3 can grow in a sealed system under the normal pressure, and volatilization and decomposition of the gallium oxide during the growth of the crystal are overcome.

Description

technical field [0001] The invention relates to a method for growing a gallium oxide single crystal, in particular to a method for growing a columnar large-sized gallium oxide single crystal by pulling under normal pressure. Background technique [0002] Semiconductors play an irreplaceable role in the modern information industrialized society, and semiconductor materials are the cornerstone of the modern semiconductor industry and microelectronics industry. The first and second generation semiconductor materials and their related technologies created the computer age and the mobile communication age. However, with the continuous development of various advanced technologies, the demand for high-performance electronic devices and optoelectronic devices that work in harsh environments such as high temperature resistance and radiation resistance is becoming more and more urgent, and the development of traditional semiconductors has approached its application limit, especially ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B15/00
CPCC30B15/00C30B29/16
Inventor 贾志泰穆文祥陶绪堂
Owner SHANDONG UNIV
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