Optical pumping white-light LED and preparation method thereof

An optical pumping and LED chip technology, applied in the field of white LEDs, can solve the problems of large color shift, less red and green light components, and increased response time, and achieve the effects of long service life, satisfactory light efficiency, and short response time.

Active Publication Date: 2015-03-04
SHENZHEN JIUZHOU OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the red and green light components in photon-pumped white LEDs are less, which cannot meet the color requirements of lighting.
Among them, blue light chip + yellow light phosphor, blue light LED response speed can reach 10 -9 s, but the coated phosphor will increase the response time, thereby affecting the transmission bandwidth of optical communication
The 3dB modulation bandwidth of blue light is about 10MHz, while affected by the phosphor emission time, the modulation bandwidth of white light is less than 5MHz
Red, green and blue three-color LEDs, because the turn-on voltage and driving current of the three LEDs are not consistent, so the design of the driving circuit is complicated, and the light decay rates of the other three LEDs are also inconsistent. After a certain period of lighting, the mixed white light will be There is a large color drift

Method used

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  • Optical pumping white-light LED and preparation method thereof
  • Optical pumping white-light LED and preparation method thereof
  • Optical pumping white-light LED and preparation method thereof

Examples

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no. 1 example

[0030] Such as Figure 1 to Figure 4 As shown, an optically pumped white LED includes a planar blue LED chip, and the planar blue LED chip includes a sapphire substrate 5, an n-type GaN layer 6, an InGaN / AlGaN double heterojunction layer 8, and a P-type GaN layer 9; P-type GaN layer 9 is provided with P electrode 10, and n-type GaN layer 6 is provided with n-electrode 7; The upper surface of sapphire substrate 5 has a photonic crystal array that makes blue light emit to the vertical direction of sapphire substrate 5 , one side of the upper surface of the photonic crystal array is sequentially provided with a red band DBR layer 2 and a red band AlGaInP epitaxial layer 1 from bottom to top, and the other side of the upper surface of the photonic crystal array is sequentially provided with a green band DBR layer from bottom to top 4 and AlGaInP epitaxial layer 3 in the green band. One side of the surface of the photonic crystal array is provided with a red-band AlGaInP epitaxial...

no. 2 example

[0038] A method for preparing an optically pumped white light LED, comprising the following steps:

[0039] (1) Prepare planar blue LED chips according to the MOCVD method; obtained by metal organic chemical vapor deposition MOCVD (Metal Organic Chemical Vapor Deposition) growth technology, the substrate is sapphire, and the growth process uses hydrogen (H 2 ) and nitrogen (N 2 ) as carrier gas, the Ga source, In source and N source used are trimethylgallium (TMGa), trimethylindium (TMIn) and ammonia (NH 3 ), the p-type dopant and n-type dopant used are magnesium dicene (Cp 2 Mg) and silane (SiH 4 ).

[0040] (2) Remove impurities on the surface of the sapphire substrate. The sapphire substrate undergoes high-temperature heat treatment in the reaction chamber to remove surface impurities. First, a 25-35nm low-temperature (730°C) GaN buffer layer is grown on the sapphire substrate, and the temperature rises (1150°C) to grow 1.5 ~3.0um unintentionally doped GaN semiconductor...

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Abstract

The invention discloses an optical pumping white-light LED and a preparation method thereof. The optical pumping white-light LED comprises a plane blue-light LED chip; the plane blue-light LED chip includes a sapphire substrate, an n type GaN layer, an InGaN / AlGaN double-heterojunction layer and a P type GaN layer which are distributed from top to bottom; the P type GaN layer is provided with a P- electrode; the n type GaN layer is provided with an n electrode; a photonic crystal array which makes blue light emitted out from a vertical direction of the sapphire substrate is generated on the upper surface of the sapphire substrate; one side of the upper surface of the photonic crystal array is provided with a red-light band DBR layer and a red-light band AlGaInP epitaxial layer which are distributed from bottom to top; and the other side of the upper surface of the photonic crystal array is provided with a green-light band DBR layer and a green-light band AlGaInP epitaxial layer which are distributed from bottom to top. The optical pumping white-light LED of the utility model has the advantages of short response time and long service life, and can well satisfy lighting requirements.

Description

technical field [0001] The invention relates to the technical field of white light LEDs, in particular to an optically pumped white light LED and a preparation method thereof. Background technique [0002] The current white LED solution used in visible light communication: (1) blue light chip + yellow fluorescent pink, (2) red, green and blue LED mixed light. At present, the red and green light components in photon-pumped white LEDs are less, which cannot meet the color requirements of lighting. Among them, blue light chip + yellow light phosphor, blue light LED response speed can reach 10 -9 s, but the coated phosphor will increase the response time, thereby affecting the transmission bandwidth of optical communication. The 3dB modulation bandwidth of blue light is about 10MHz, while the modulation bandwidth of white light is less than 5MHz due to the influence of phosphor emission time. Red, green and blue three-color LEDs, because the turn-on voltage and driving curren...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/08H01L33/00
CPCH01L33/0075H01L33/06H01L33/08H01L33/10H01L2933/0008H01L2933/0066
Inventor 徐健
Owner SHENZHEN JIUZHOU OPTOELECTRONICS TECH
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