Wafer-level packaging method for a semiconductor device

Abstract

The invention relates to a wafer level package method for a semiconductor device, and belongs to the technical field of semiconductor package. The wafer level package method includes the process flows: providing a silicon-based wafer; forming an arrayed metal projection on the surface of an epitaxial layer of the silicon-based wafer through a projection process; packaging the metal projection, thinning a packaging layer and exposing the surface of the metal projection; turning over and thinning the other surface of a silicon substrate; removing a light-exiting surface of a middle area of the silicon substrate exposed to the epitaxial layer by the aid of an annular reticle mask or jig, and processing the microstructure of the exposed light-exiting surface of the epitaxial layer; dividing the epitaxial layer into crisscross epitaxial layer intervals; forming a fluorescent powder layer and an euphotic layer in an annular cavity; cutting the silicon-based wafer along the epitaxial layer intervals to form an independent single photodiode. The photodiode package method is thin, small in stress and low in cost.

Description

technical field [0001] The invention relates to a wafer-level packaging method for a semiconductor device, belonging to the technical field of semiconductor packaging. Background technique [0002] Photodiodes, semiconductor devices that convert electricity into light, have come a long way as a new source of solid-state lighting. Due to the influence of factors such as product performance, manufacturing cost, and external dimensions, the packaging forms of photodiodes are also constantly evolving and enriching: traditional photodiode packaging forms mainly include bracket-type packaging, plastic-encapsulation-type EMC packaging, and metal printed board-type COB packages, and ceramic substrate-style packages. Such as figure 1 As shown, the traditional photodiode uses expensive sapphire or silicon carbide as the substrate to form a photodiode chip, which limits the space for reducing the production cost of the photodiode, and its thickness is generally above 500 microns, whi...

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Problems solved by technology

like figure 1 As shown, the traditional photodiode uses expensive sapphire or silicon carbide as the substrate to form a photodiode chip, which limits the space for reducing the production cost of the photodiode, and its thickness is generally above 500 microns, which limits the space for packaging the light source; At the same time, the mechanical properties of the phosphor layer and the substrate of the white light photodiode are quite different, and thermal stress is easily formed due to temperature changes during the process or use, which leads to cracking and breaking of the photodiode packaging product, reducing product reliability. sex

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