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Method for coating carbon on quartz ampoule for growing crystals

A quartz ampoule and crystal growth technology, which is applied in the direction of coating, etc., can solve the problems of long carbon plating time, complicated operation procedures, and low carbon content of carbon source, and meet the requirements of simple carbon plating, simplify gas circuit devices, and improve carbon plating efficiency effect

Active Publication Date: 2015-03-25
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention overcomes the deficiencies of the prior art, and provides an embodiment of a carbon coating method for quartz ampoules used for crystal growth, hoping to solve the problem of high equipment requirements for carbon coating devices, complex operating procedures, and difficulties in adapting to quartz with various specifications. The carbon plating requirements of ampoules and the low carbon content of the carbon source lead to long carbon plating time and poor carbon plating effect

Method used

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  • Method for coating carbon on quartz ampoule for growing crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Place the quartz ampoule to be carbonized in the tube furnace: put the quartz ampoule 3 to be carbonized into the carbon coating temperature zone in the tube 1 of the tube furnace (after the tube furnace is heated up, the temperature in the furnace is 900-1000°C area, this temperature is obtained by the temperature field test in the furnace), after the carbon plating position is determined, the vent tube 4 is put into the quartz ampoule 3, and the vent tube nozzle is positioned at 30 millimeters away from the quartz ampoule tail.

[0033] Heat up the tube furnace and exhaust the air: raise the furnace temperature to 900°C at a rate of 5°C / min under normal pressure, keep it warm for 30 minutes after reaching the temperature, open the inert gas controller 5, and open the inert gas pipeline valve 6-way Nitrogen gas with a purity of more than 99.99% is passed through the quartz ampoule 3 to remove residual air, the gas flow rate is 70 ml / min, and the nitrogen gas flow time i...

Embodiment 2

[0037] Place the quartz ampoule to be carbonized in the tube furnace: put the quartz ampoule 3 to be carbonized into the carbon coating temperature zone in the tube 1 of the tube furnace (after the tube furnace is heated up, the temperature in the furnace is 900-1000°C area, this temperature is obtained by the temperature field test in the furnace), after the carbon plating position is determined, the vent tube 4 is put into the quartz ampoule 3, and the vent tube nozzle is positioned at 30 millimeters away from the quartz ampoule tail.

[0038] Heat up the tube furnace and exhaust air: raise the furnace temperature to 950°C at a rate of 6°C / min under normal pressure, keep it warm for 30 minutes after reaching the temperature, open the inert gas controller 5, and open the 6-way valve of the inert gas pipeline Argon gas with a purity of more than 99.99% is passed through the quartz ampoule 3 to remove residual air, the gas flow rate is 70 ml / min, and the time for passing argon g...

Embodiment 3

[0042] Place the quartz ampoule to be carbonized in the tube furnace: put the quartz ampoule 3 to be carbonized into the carbon coating temperature zone in the tube 1 of the tube furnace (after the tube furnace is heated up, the temperature in the furnace is 900-1000°C area, this temperature is obtained by the temperature field test in the furnace), after the carbon plating position is determined, the vent tube 4 is put into the quartz ampoule 3, and the vent tube nozzle is positioned at 30 millimeters away from the quartz ampoule tail.

[0043] Heat up the tube furnace and exhaust the air: raise the furnace temperature to 1000°C at a rate of 8°C / min under normal pressure, keep it warm for 30 minutes after reaching the temperature, open the inert gas controller 5, and open the inert gas pipeline valve 6-way Nitrogen gas with a purity of more than 99.99% is passed through the quartz ampoule 3 to remove residual air, the gas flow rate is 70 ml / min, and the nitrogen gas flow time ...

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Abstract

The invention discloses a method for coating carbon on a quartz ampoule for growing crystals. The method comprises the following steps: putting a to-be-coated quartz ampoule by carbon into a tube furnace, increasing the temperature of the tube furnace to the temperature for coating carbon, and exhausting air in the tube furnace; then introducing acetylene which serves as a carbon source into the tube furnace, pyrolyzing the acetylene at a high temperature, and depositing a layer of carbon film on the inner wall of the quartz ampoule; and finally post-processsing the carbon film. By adopting the method disclosed by the invention, a gas way device can be simplified, no vacuum device and exhaust pipe needs to be installed, and the efficiency of coating carbon can be improved significantly. In addition, the method can meet the carbon coating requirements of quartz ampoules of various sizes and shapes.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of crystal growth, and more specifically, embodiments of the present invention relate to a method for carbon plating a quartz ampoule used for crystal growth. Background technique [0002] Crystal growth methods are mainly divided into melt growth, solution growth, gas phase growth, and solid phase growth according to the type of parent phase. Among them, melt growth is the most common single crystal obtaining technology. This method is to polycrystalline The raw material is placed in a quartz ampule, heated above the melting point, and then cooled slowly to form a single crystal. [0003] Inorganic crystals generally have a high melting point. During the growth process under high temperature conditions, the high-temperature melt is easy to adhere to the quartz ampoule, resulting in heterogeneous nucleation and affecting the quality of the crystal. High-pressure gas is ejected, causing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
CPCC03C17/22C03C2218/152
Inventor 唐明静康彬邓建国袁泽锐窦云巍张羽方攀
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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