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Deposit removal method and gas treatment device

A technology of deposits and gases, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve the problems of the difference between the central part and the peripheral part, and the difficulty in improving the uniformity of substrate processing, so as to prevent damage and uniformity The effect of treatment and efficient removal

Active Publication Date: 2017-05-10
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In addition, there is a problem that the speed of removing deposits tends to differ between the central portion and the peripheral portion of the substrate, making it difficult to improve the uniformity of processing in the plane of the substrate.

Method used

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  • Deposit removal method and gas treatment device
  • Deposit removal method and gas treatment device
  • Deposit removal method and gas treatment device

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Embodiment Construction

[0022] Hereinafter, details of the present invention will be described based on embodiments with reference to the drawings.

[0023] figure 1 It is a vertical cross-sectional view schematically showing a configuration example of the plasma processing apparatus 100 used in the oxygen plasma processing step in the deposit removal method according to one embodiment of the present invention. As shown in the figure, this plasma processing apparatus 100 includes a processing chamber 101 capable of hermetically sealing the inside. A stage 102 on which a semiconductor wafer (substrate) W is placed is provided in the processing chamber 101 . The stage 102 includes a temperature control mechanism (not shown), and can maintain the temperature of the semiconductor wafer W placed on the stage 102 at a predetermined temperature.

[0024] The processing chamber 101 is made of, for example, quartz or the like, and a window 103 made of quartz is formed on the top thereof. Furthermore, an R...

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Abstract

It has a process of heating the substrate and exposing the substrate to oxygen plasma, and a cycle treatment process in which the substrate is exposed to an atmosphere of a mixed gas of hydrogen fluoride gas and alcohol gas, and repeats the following two stages : The first stage in which the total pressure of the mixed gas is set to the first full pressure or the partial pressure of the alcohol gas is set to the first partial pressure of the alcohol gas, and the total pressure of the mixed gas is set to be lower than the first full pressure The second full pressure of the alcohol gas or the second stage of setting the partial pressure of the alcohol gas to the second partial pressure of the alcohol gas lower than the first partial pressure of the alcohol gas, in the circulation process, from the area opposite to the substrate The mixed gas is supplied to the substrate, and the supply amount of the mixed gas per unit area from the first region including the central portion of the substrate is larger than the supply amount of the mixed gas per unit area from the second region outside the first region.

Description

[0001] This application has an international filing date of April 12, 2013, a date of entering the Chinese national phase on September 18, 2014, an application number of 201380014965.X, and an invention title of "deposit removal method and gas treatment device" Divisional application of Chinese patent application. technical field [0002] The invention relates to a deposit removal method and a gas treatment device. Background technique [0003] Conventionally, in the field of manufacturing semiconductor devices, a process of forming a desired pattern by performing a film-forming process and an etching process on a substrate such as a semiconductor wafer has been performed. If the STI (Shallow Trench Isolation: Shallow Trench Isolation) process is implemented in the manufacturing process of such a semiconductor device, silicon oxide (for example, SiO 2 , SiOBr) deposits. Conventionally, such deposits have been removed by, for example, treatment using HF single gas. [0004...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01J37/32
CPCH01J37/32449H01L21/02057H01L21/0206H01L21/3065H01L21/0234H01L21/67069
Inventor 田原慈西村荣一
Owner TOKYO ELECTRON LTD
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