Semiconductor substrate and manufacturing method thereof

Abstract

A semiconductor substrate and its manufacturing method, the manufacturing method comprising the following steps: providing a semiconductor substrate, the semiconductor substrate has a plurality of deep grooves; forming a plurality of insulating structures on the semiconductor substrate, each insulating structure has An isolation part and a protruding part, the isolating part is located in the deep trench, the protruding part is located on the isolating part and the overflow part of the protruding part covers the semiconductor substrate, and a bit is defined between adjacent two protruding parts line area; then forming a sacrificial layer covering these protrusions and these bit line areas, the sacrificial layer has a plurality of openings; then forming a plurality of shielding structures in these openings; finally using these shielding structures as a self-aligned mask, Parts of the sacrificial layer and the semiconductor substrate are selectively removed to form two bit line trenches in each bit line area to reduce the use of a photomask.

Description

technical field [0001] The present invention relates to a semiconductor process technology, in particular to a semiconductor substrate and a manufacturing method thereof which can be applied to memory elements and define bit line grooves in a mask-free manner. Background technique [0002] Memory, as the name implies, is a semiconductor component used to store data. Generally, in the storage of digital data, it is customary to use bits (Bit) to represent the capacity of the memory, and each unit used to store data in the memory is called a storage unit (cell). ). As the functions of computer microprocessors become more and more complex, and the calculations performed by software programs become more and more complex, memory manufacturing technology has become one of the important technologies that cannot be ignored in the semiconductor industry. Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a kind of volatile memory, which is composed of multiple memo...

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Problems solved by technology

[0004] However, although the pattern formed based on the above-mentioned process has better resolution, the complexity of this lithography process is high, and it will be limited by the alignment position of the mask, the magnification error, and the stepper. Problems such as the correctness of alignment with the Scanner and the matching between mechanical devices lead to a tighter process margin (Processwindow), which increases the difficulty of alignment and may even cause problems in the process. Defect

[0005] In addition, metal-insulator-metal (MIM) capacitors are commonly used among many types of capacitors, but making MIM capacitors usually requires more than three layers of photomasks and complicated processes, so it is easy to modify the process. Yield has adverse effects (because complicated process is one of the potential reasons for yield reduction)

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