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Method for manufacturing energy-accumulation photoelectricity CIGS solar cell

A solar cell and optoelectronic technology, applied in the fields of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of not easy to carry, limit the development of miniaturization of solar cells, etc., and achieve the effect of increasing electrical conductivity

Active Publication Date: 2015-04-22
中科海奥(黄山)储能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Copper indium gallium selenide (CIGS) is the most efficient thin-film solar cell, but the existing solar cell is only a light energy converter, which converts solar energy into electrical energy output. The current research on solar energy is only how to improve the conversion rate. For The storage of electric energy is only an external energy storage device with a single function. Since the external device is not easy to carry, it directly limits the development of the miniaturization of solar cells.

Method used

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  • Method for manufacturing energy-accumulation photoelectricity CIGS solar cell

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Experimental program
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Effect test

Embodiment 1

[0024] Sputter 0.45g of copper, 0.15g of indium, 0.35g of gallium and 1g of carbon microspheres onto the conductive surface of the top conductive glass substrate 1 by hybrid sputtering at 200°C, and then perform selenization in a selenium atmosphere to form For the CIGS storage layer 2 with a thickness of 500 μm, in the process of mixed sputtering and selenization, the mass ratio of copper: indium: gallium: selenium: carbon microspheres is 9:3:7:15:20;

[0025] Spray metal oxide NiO on the bottom conductive glass substrate 7, sinter at 300°C to form the storage layer 6, insert the separator 4 between the CIGS storage layer 2 and the storage layer 6, and press them, and then press them Tetraethylammonium tetrafluoroborate and dimethyl carbonate are injected into the device at a volume ratio of 1:1 to form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, and then seal the periphery of the device to form an energy storage Photovoltaic CIGS solar cell...

Embodiment 2

[0028] Sputter 0.45g copper, 0.15g indium, 0.35g gallium and 1.2g carbon microspheres onto the conductive surface of the top conductive glass substrate 1 by hybrid sputtering method at 200°C, and then perform selenization under a selenium atmosphere A CIGS storage layer 2 with a thickness of 700 μm is formed. During the mixed sputtering and selenization process, the mass ratio of copper: indium: gallium: selenium: carbon microspheres is 9:3:7:15:24;

[0029] Spray polyaniline on the conductive glass substrate 7 on the bottom surface, sinter at 300°C to form the storage layer 6, insert the separator 4 between the CIGS storage layer 2 and the storage layer 6, and press them, and then put them into the pressed device Inject monomethyltriethylammonium tetrafluoroborate and dimethyl carbonate at a volume ratio of 1:1 to form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, and then seal the periphery of the device to form a reservoir. Energy photoelect...

Embodiment 3

[0032] Sputter 0.45g copper, 0.15g indium, 0.35g gallium and 1.4g carbon microspheres onto the conductive surface of the top conductive glass substrate 1 by hybrid sputtering method at 300°C, and then perform selenization under a selenium atmosphere A CIGS storage layer 2 with a thickness of 900 μm is formed, and in the process of mixed sputtering and selenization, the mass ratio of copper: indium: gallium: selenium: carbon microspheres is 9:3:7:15:28;

[0033] Spraying metal oxide MnO on the bottom conductive glass substrate 7 2 , sintered at 300°C to form the storage layer 6, insert the separator 4 between the CIGS storage layer 2 and the storage layer 6 and press them, and then inject tetraethyl into the pressed device at a volume ratio of 1:1 Ammonium tetrafluoroborate and diethyl carbonate form the first electrolyte layer 3 and the second electrolyte layer 5 respectively, and then seal the periphery of the device to form an energy storage photoelectric CIGS solar cell.

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Abstract

The invention discloses a method for manufacturing an energy-accumulation photoelectricity CIGS solar cell. The method is characterized in that structural layers of the energy-accumulation photoelectricity CIGS solar cell sequentially comprise a top surface conductive glass substrate, a CIGS electricity-accumulation layer, a first electrolyte layer, a membrane, a second electrolyte layer, an electricity-accumulation layer and a bottom surface conductive glass substrate from top to bottom, and the top surface conductive glass substrate and the bottom surface conductive glass substrate serve as counter electrodes. The energy-accumulation material CIGS layer is manufactured through a mixed sputtering method, wherein the energy-accumulation material and the CIGS generate a special structure, so the conductivity of the energy-accumulation material itself is enhanced; electrolytes and the membrane are additionally arranged in the solar cell, and therefore the problem of electron conduction in the energy accumulation process is solved. According to the method, an externally arranged electricity accumulation device is not needed, the function of converting light energy into the electricity energy and the function of accumulating the electricity energy are integrated in the same structure, and a non-light-energy charging function is achieved.

Description

[0001] This application is a divisional application with the filing date: June 11, 2012, the application number: 2012101907356, and the name: an energy storage photovoltaic CIGS solar cell and its preparation method. technical field [0002] The invention relates to the field of energy technology, in particular to a method for preparing a solar cell. Background technique [0003] With the increasingly severe energy and environmental crisis, finding new and renewable energy sources is becoming an urgent problem to be solved. Solar energy is inexhaustible, and it is green and renewable. Among them, thin-film solar technology has been on the rise in recent years because of its light weight, low cost, and easy installation. Copper indium gallium selenide (CIGS) is the most efficient thin-film solar cell, but the existing solar cell is only a light energy converter, which converts solar energy into electrical energy output. The current research on solar energy is only how to imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/053H01L31/18
CPCH01L31/1844Y02E10/544Y02P70/50
Inventor 李学良罗梅陈洁洁肖正辉
Owner 中科海奥(黄山)储能科技有限公司
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