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Polycrystalline silicon reduction furnace body

A polysilicon and reduction furnace technology, applied to silicon and other directions, can solve the problems of high energy consumption of polysilicon reduction furnace, difficulty in polishing the inner wall of the furnace, low polysilicon, etc., and achieve the effect of preventing high-temperature hydrogen chloride corrosion, ensuring service life and improving utilization rate.

Inactive Publication Date: 2015-04-29
SPECIAL EQUIP SAFETY SUPERVISION INSPECTION INST OF JIANGSU PROVINCE +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a polysilicon reduction furnace body with multi-layer metal heat insulation boards. By providing a heat shield in the interlayer furnace body, the existing polysilicon reduction furnace has high energy consumption, difficulty in polishing the inner wall of the furnace, and heat loss. Radiation causes the problem of high-temperature hydrogen chloride corrosion on the inner wall of the furnace, thereby improving the utilization rate of heat energy in the furnace, and reducing the energy consumption of polysilicon with lower electric energy and easy-to-operate technology

Method used

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  • Polycrystalline silicon reduction furnace body
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  • Polycrystalline silicon reduction furnace body

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Effect test

Embodiment 1

[0017] Embodiment 1: as figure 1 , 2 , Shown in 3, polysilicon reduction furnace furnace body comprises interlayer furnace inner wall 1; Chassis 2; Stainless steel bolt 3; Metal insulation plate 4; According to the proportion of the inner wall 1 of the interlayer furnace, the metal insulation board 4 is made to keep the same shape as the inner wall 1 of the interlayer furnace. For a small furnace body, the inner wall 1 of the interlayer furnace has a small area, and the radiation heat loss is relatively slow. The metal insulation board 4 with a thickness of 2.1 mm and 3 layers in total can be selected. The diameter of the bolt hole on the board is 10 mm, and the specification is M8. Stainless steel SUS316L bolts, the length of the screw rod is 30mm, by welding the stainless steel spacer 9 with a bolt hole thickness of 5mm on the outer side of the metal heat shield 4, the distance D of the heat insulation layer can be controlled = 5mm, and the distance between the multilayer m...

Embodiment 2

[0018] Embodiment 2: as figure 1 , 2 , Shown in 3, polysilicon reduction furnace furnace body comprises interlayer furnace inner wall 1; Chassis 2; Stainless steel bolt 3; Metal insulation plate 4; According to the proportion of the inner wall 1 of the interlayer furnace, the metal insulation board 4 is made to keep the same shape as the inner wall 1 of the interlayer furnace. For the medium-sized furnace body, the radiation heat loss of the inner wall 1 of the interlayer furnace is relatively fast, and the metal heat shield plate 4 with a thickness of 3 mm can be selected, with a total of 4 layers. The diameter of the bolt hole on the plate is 12 mm, and the stainless steel 304 bolts and screws with a specification of M10 are used. The length is 60 mm. By welding the stainless steel spacer 9 with a bolt hole thickness of 8 mm on the outer side of the metal heat insulation board 4, the distance D of the heat insulation layer can be controlled = 8 mm. The stainless steel bolts...

Embodiment 3

[0019] Embodiment 3: as figure 1 , 2 , Shown in 3, polysilicon reduction furnace furnace body comprises interlayer furnace inner wall 1; Chassis 2; Stainless steel bolt 3; Metal insulation plate 4; According to the proportion of the inner wall 1 of the interlayer furnace, the metal insulation board 4 is made to keep the same shape as the inner wall 1 of the interlayer furnace. For a large furnace body, the inner wall 1 of the interlayer furnace has a large area, and the radiation heat loss is very fast. A metal heat shield 4 can be selected, with a total of 5 layers, of which the thickness of the inner and outer layers is 5mm, and the thickness of the middle three layers is 2.2mm. Bolt holes are opened on the board. The diameter is 14mm, using stainless steel SUS316L bolts with specifications M12, the length of the screw rod is 90mm, by welding the stainless steel isolation gasket 9 with a bolt hole thickness of 10mm on the outer side of the metal heat insulation plate 4, the...

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Abstract

The invention discloses a polycrystalline silicon reduction furnace body. 3-5 layers of metal thermal baffles are arranged in the furnace body; and the multiple layers of metal thermal baffles are fixedly connected together by virtue of stainless steel bolts and are fixed to the inner wall surface of the furnace body in a bolted connection mode. The thermal baffles are made of stainless steel, the shapes of the thermal baffles are consistent with the inner wall of the furnace body, and the interlayer of the thermal baffles is communicated with the inner cavity of the furnace body. According to the polycrystalline silicon reduction furnace body disclosed by the invention, the multiple layers of metal thermal baffles cover polycrystalline silicon bars, so that the heat loss can be greatly reduced, the utilization rate of heat energy in the furnace body is improved, the problem that energy waste is caused because the inner wall of the conventional furnace body is difficult to polish and the polishing effect is poor is solved, and the production cost of the polycrystalline silicon is reduced by virtue of low electric energy and an easily operated technology.

Description

technical field [0001] The invention relates to a polysilicon reduction furnace body, in particular to a polysilicon reduction furnace body suitable for multi-layer heat insulation and energy saving. Background technique [0002] With the development of science and technology, the solar photovoltaic industry and the semiconductor industry are developing more and more rapidly. As the main raw material of the solar photovoltaic industry and the semiconductor industry, the industrial demand for polysilicon is also increasing. At present, polysilicon production enterprises at home and abroad mainly adopt the "improved Siemens method". The production process of this method is to use hydrogen chloride and silicon powder to synthesize trichlorosilane at a certain temperature, and then separate and rectify trichlorosilane to purify it. After the purified high-purity trichlorosilane is mixed with hydrogen in proportion, the Pass it into the polysilicon reduction furnace at a certain...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03
Inventor 任智铨汪剑江利张腾飞魏婷
Owner SPECIAL EQUIP SAFETY SUPERVISION INSPECTION INST OF JIANGSU PROVINCE
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