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Substituted aryl onium materials

A substituent, heteroaryl technology, applied in the field of new onium acid generators

Active Publication Date: 2015-04-29
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] EUV photoresist development remains a challenging issue for EUV lithography (EUVL) technology implementation

Method used

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  • Substituted aryl onium materials
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  • Substituted aryl onium materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0162]

[0163] Bis(4-(2-carboxypropan-2-yl)phenyl)iodonium bromide

[0164] 2-Methyl-2-phenylpropanoic acid (10 g, 60.9 mmol) was suspended in a 1:1 mixture of sulfuric acid and acetic acid (90 mL), and heated to 55 °C, where it was slowly dissolved in batches over 90 min. Join NaIO 4 (23.4 mmol, 5.00 g), followed by heating for an additional 1 hour. The reaction mixture was cooled, poured into ice water (1 L) and extracted with methyl tert-butyl ether (MTBE) (3 x 350 mL). Potassium bromide (0.609 mol, 72.4 g) in water (100 mL) was added to the aqueous layer and extracted with dichloromethane (DCM) (3 x 300 mL). The combined organic layers were concentrated and the crude residue was recrystallized from heptane, ethyl acetate and acetone to afford the title compound (5.27, 42%) as a white solid. 1 H NMR (300MHz, (CD 3 ) 2 SO) δ: 12.6 (brs, 2COOH), 8.16 (d, J = 8.1 Hz, 4H), 7.45 (d, J = 8.1 Hz, 4H), 1.43 (2, 12H).

Embodiment 2

[0166]

[0167] Bis(4-(2-carboxypropan-2-yl)phenyl)iodonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate

[0168] Bis(4-(2-carboxypropan-2-yl)phenyl)iodonium bromide (1.53 g, 2.87 mmol) and 1,1,2,2,3,3,4,4,4-nonafluoro Potassium butane-1-sulfonate (3.16 mmol, 1.07 g) was dissolved in DCM (50 mL) and water (50 mL) and stirred overnight. The layers were separated, the aqueous phase was extracted with DCM (2 x 100 mL), the combined organic phases were washed with water (2 x 100 mL) and concentrated to give the title compound (1.25 g, 58%) as a white solid. 1 H NMR (300MHz, (CD3)2CO) δ: 11.4 (brs, 2COOH), 8.34 (d, J = 7.8Hz, 4H), 7.64 (d, J = 7.8Hz, 4H), 1.57 (s, 12H).

Embodiment 3

[0170]

[0171] 5-(3-(Carboxymethyl)-4-methoxyphenyl)-dibenzothiophene iodide

[0172] Eaton's reagent (phosphorus pentoxide solution in methanesulfonic acid) (400 mL) was added to 2-methoxyphenylacetic acid (140 g, 0.843 mol) and dibenzothiophene oxide (160 g, 0.800 mol) A solution in dichloromethane (400 mL) was stirred at 25°C for 18 hours, cooled to 0°C, and carefully quenched with water (1 L). The aqueous mixture was washed with MTBE (3 x 500 mL) and the aqueous phase was poured into aqueous sodium iodide (300 g in 3 L) followed by vigorous stirring for 1 h. The precipitate was filtered, washed with water (3 x 1 L), acetone (1 L) and MTBE (2 x 500 mL) to afford the title compound as a white solid (360 g, 94%). 1 HNMR (500MHz, (CD3) 2 SO) δ: 12.30(brs, COOH), 8.52(d, J=7.5Hz, 2H), 8.31(d, J=8.5Hz, 2H), 7.95(t, J=7Hz, 2H), 7.75(t, J=8Hz, 2h), 7.70(dd, J=9, 2Hz, 1H), 7.31(d, J=2Hz, 1H), 7.23(d, J=8.5Hz, 1H), 3.82(s, 3H), 3.46(s, 2H).

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Abstract

Acid generators comprising a carbocyclic or heteroaromatic group substituted with at least one diester moiety are provided. These acid generators are particularly useful as a photoresist composition component.

Description

technical field [0001] One aspect of the present invention pertains to novel onium acid generators comprising substituted carbocyclic or heteroaryl groups. Background technique [0002] A photoresist is a light-sensitive film capable of transferring an image to a substrate. They form negative or positive images. After coating a photoresist on a substrate, the coating is exposed through a patterned photomask to an activating energy source, such as ultraviolet light, to form a latent image in the photoresist coating. The photomask has regions that are opaque and transparent to the activating radiation, such regions being able to define the image that is desired to be transferred to the underlying substrate. Developing the latent image in the photoresist layer provides a stereoscopic image. [0003] Known photoresists can provide sufficient resolution and size for many existing commercial applications. However, for many other applications, new photoresists that can provide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004C07D333/76C07D335/16C07D327/08C07D333/46C07C323/62C07C69/65C07C69/67C07C323/19G03F7/00
CPCC07C323/62C07D333/76C07D335/16C07D409/10C07J9/005C07J31/006G03F7/0045G03F7/0046G03F7/0382G03F7/0397C07C381/12
Inventor P·J·拉博姆
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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