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Double-layer convex-point diode chip preparation method

A diode and double-layer convex technology, which is applied in the field of double-layer bump diode chip preparation, can solve the problems of low yield and low efficiency, and achieve the effects of reducing packaging costs, high efficiency, and shortening the packaging process

Inactive Publication Date: 2015-04-29
扬州倍英斯微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because this method adopts two screen printings and one-step film placement, the efficiency is low, the yield rate is low, and welding defects are prone to occur.

Method used

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  • Double-layer convex-point diode chip preparation method
  • Double-layer convex-point diode chip preparation method
  • Double-layer convex-point diode chip preparation method

Examples

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Embodiment Construction

[0013] The specific implementation method of the patent of the present invention is:

[0014] The schematic diagram of the structure of the semiconductor diode chip after metallization is completed. figure 1 shown, see figure 2 , punch the anode surface of the entire wafer, put the stencil 5 made according to the chip layout size on the wafer and align it, so that the position of the opening of the stencil corresponds to the bonding point of the anode 2 of each diode core one by one, Implant tin alloy balls 6 through the stencil 5 at the opening of the solder pad. The diameter of the tin alloy balls should be smaller than the size of the opening of the stencil. Remove the stencil, and heat the diode chip planted with balls to melt and reflow the tin alloy balls. After cooling, the tin alloy ball 6 forms an ohmic contact with the metal anode 2 of the diode chip, and forms an anode bump diode chip structure, see image 3 . Flip the anode bump diode chip so that the cathode ...

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Abstract

The invention discloses a double-layer convex-point diode chip preparation method which comprises the following steps: after the negative electrode and the positive electrode of a diode are metalized, implanting a tin alloy ball at the bonding point of the negative electrode and the positive electrode in a ball implanting mode, and heating to melt the tin alloy ball, thereby enabling the metal electrodes to be in ohmic contact and forming a double-layer convex-point diode chip structure. By adopting the method, the later packaging process is simplified, the electric signal transmission is improved, and the packaging cost is lowered.

Description

technical field [0001] The invention relates to a method for preparing a double-layer bump diode chip, which belongs to the technical field of semiconductor discrete device diode chips. Background technique [0002] There are two methods of metal wire bonding and solder tab sintering for the lead part of the subsequent packaging of the diode chip. Among them, the process of solder tab sintering is usually semi-automatic or manual. The diode chip is pre-soldered (solder is soldered on both sides of the chip), then the chip is mounted (the pre-soldered chip is mounted on the lead frame), and finally the lead wire is bonded through the heating and sintering process. Since this method adopts two screen printings and one-step film placement, the efficiency is low, the yield rate is low, and welding defects are prone to occur. [0003] The BGA (Ball Grid Array) packaging technology of integrated circuit (IC) chips adopts BGA solder balls. By planting balls, BGA solder balls are p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2224/11H01L2224/14H01L29/6609H01L24/11
Inventor 林志贵
Owner 扬州倍英斯微电子有限公司
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