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Method for restraining dark current of SiC ultraviolet photoelectric detector

An electrical detector and dark current technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of not considering the different generation mechanisms of dark current, and the dark current suppression effect needs to be improved, so as to achieve dark current suppression and improve detection rate. Effect

Inactive Publication Date: 2015-04-29
吴正云 +1
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Problems solved by technology

An important factor affecting the detection rate of SiC ultraviolet detectors is the dark current of the device. At present, SiO is commonly used to suppress dark current. 2 , SiN or other dielectric film passivation methods, but the technology used does not consider the different dark current generation mechanisms of the device under actual working conditions, and the suppression effect on dark current needs to be improved

Method used

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Embodiment Construction

[0012] In order to make it easy to understand the technical means, creative features, goals and effects achieved by the present invention, the present invention will be further explained with specific examples below.

[0013] A method for suppressing the dark current of a SiC ultraviolet photodetector includes the following steps:

[0014] Step 1: Using the characteristics of SiC, a sacrificial layer is grown by dry oxygen thermal oxidation on the Si surface of the material, and a layer of SiOx is grown on the SiC surface in a high temperature dry oxygen atmosphere of 1000 degrees, and then removed with hydrofluoric acid and quickly with hot deionized water Flushing can effectively reduce the carrier recombination center density on the surface of the device;

[0015] Step 2: Blow dry quickly with dry pure nitrogen and put it into the oxidation furnace immediately, by quickly heating to 1000 degrees, first dry oxygen oxidation for 1 hour, then wet oxygen oxidation for 4 hours, then dr...

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Abstract

The invention discloses a method for restraining dark current of an SiC ultraviolet photoelectric detector. According to the method, an SiO2 thin film and an SiN thin film are prepared on the surface of the SiC ultraviolet photoelectric detector by utilizing different generation methods according to the generation sources and restraining principles of the dark current of the SiC ultraviolet photoelectric detector; by respectively considering the dark current restraining capacity of each thin film under high and low electric field conditions, effectively decreasing the composition of current carriers on the surface of the SiC ultraviolet photoelectric detector and comprehensively combining a plurality layers of dielectric films and the growth technical conditions, the restraining for the dark current of the SiC ultraviolet photoelectric detector can be further realized and the detection efficiency of the SiC ultraviolet photoelectric detector can be effectively improved.

Description

Technical field [0001] The invention relates to a method for suppressing dark current, in particular, to a method for suppressing dark current of a SiC ultraviolet photodetector. Background technique [0002] Ultraviolet photodetectors have a huge application background in national defense and civil fields, and semiconductor ultraviolet photodetectors are one of the important products. The use of SiC material to prepare ultraviolet detectors has the advantages of high quantum efficiency, low dark current, and visible light blindness. An important factor affecting the detection rate of SiC UV detectors is the dark current of the device. At present, the commonly used method of suppressing dark current uses SiO 2 , SiN or other dielectric film passivation methods, but the process adopted does not consider the different dark current generation mechanism of the device under actual working conditions, and the suppression effect of dark current needs to be improved. Since the intensity...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/09H01L31/1812Y02P70/50
Inventor 吴正云李忠东吴惠忠
Owner 吴正云
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