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Growth method of LED epitaxial wafer and LED epitaxial wafer

A technology of light-emitting diodes and growth methods, which is applied in the field of light-emitting diode epitaxial wafers, can solve problems such as the reduction of LED luminous efficiency, achieve the effects of reducing defect density and improving crystal quality

Active Publication Date: 2015-04-29
HC SEMITEK CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem in the prior art that upwardly extending dislocation defects are generated at the junction of the two-dimensional GaN layer and the PSS, resulting in a decrease in LED luminous efficiency, an embodiment of the present invention provides a method for growing a light-emitting diode epitaxial wafer and a light-emitting diode epitaxial wafer

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  • Growth method of LED epitaxial wafer and LED epitaxial wafer
  • Growth method of LED epitaxial wafer and LED epitaxial wafer
  • Growth method of LED epitaxial wafer and LED epitaxial wafer

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Embodiment 1

[0059] An embodiment of the present invention provides a method for growing a light-emitting diode epitaxial wafer, see figure 1 , the growth method includes:

[0060] Step 101: growing a low-temperature buffer layer on the PSS.

[0061] Step 102: growing a first three-dimensional layer on the low-temperature buffer layer.

[0062] Step 103: growing a first two-dimensional layer on the first three-dimensional layer under a first set condition.

[0063] It should be noted that during the execution of step 103, the epitaxial wafer will undergo obvious lateral growth, and most of the space between the epitaxial layer (such as GaN) and the foreign substrate (such as sapphire) will be released during the lateral growth process. Stress can divert or even annihilate the dislocations that appear in the epitaxial layer grown on the heterogeneous substrate, significantly reducing the dislocation density in the epitaxial wafer, and changing the dislocation density from 1*10 19 -2*10 ...

Embodiment 2

[0103] An embodiment of the present invention provides a method for growing a light-emitting diode epitaxial wafer. In this embodiment, the group III nitride layer is GaN, and the first setting condition and the second setting condition can satisfy the following relationship: the second setting The growth temperature in the condition is 50-200°C lower than the growth temperature in the first set condition, the growth pressure in the second set condition is higher than the growth pressure in the first set condition, and the growth pressure in the second set condition The growth pressure is greater than or equal to 300torr. see image 3 , the growth method includes:

[0104] Step 201: PSS is loaded into reaction chamber, under H 2 Heat to 1040-1080°C, bake for 6 minutes (min), and the pressure is 150torr.

[0105] Step 202: growing a GaN buffer layer, the thickness of the GaN buffer layer is 15-35nm, NH 3 The flow rate is 5-15 liters / minute (slm), the flow rate of TMGa is 28...

Embodiment 3

[0126] An embodiment of the present invention provides a method for growing a light-emitting diode epitaxial wafer. In this embodiment, the Group III nitride layer is GaN, and the first setting condition and the second setting condition may also satisfy the following relationship: the second setting The growth temperature in the given condition is at least 10°C lower than the growth temperature in the first set condition, the V / III ratio in the second set condition is lower than the V / III ratio in the first set condition, and the second set condition Conditions where the V / III ratio is greater than 200. see Figure 5 , compared with Embodiment 2, steps 301-305, 307 of this embodiment are the same as steps 201-205, 207 in Embodiment 2 respectively, and the differences between this embodiment and Embodiment 2 are:

[0127] Step 306: The pressure is kept at 200torr, and the temperature is lowered to 1030°C to grow a three-dimensional GaN layer, NH 3 The flow rate was reduced to...

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Abstract

The invention discloses a growth method of an LED epitaxial wafer and the LED epitaxial wafer, and belongs to the technical field of semiconductors. The growth method comprises the following steps: growing a low temperature buffer layer, a first three-dimensional layer, a first two-dimensional layer, a second three-dimensional layer and a second two-dimensional layer in sequence on a PSS, wherein the first three-dimensional layer and the second three-dimensional layer are three-dimensional island-shaped, and the first two-dimensional layer and the second two-dimensional layer are plane-shaped; the growth temperature of the second three-dimensional layer is 50-200 DEG C lower than that of the first two-dimensional layer; the growth temperature of the second three-dimensional layer is 10-50 DEG C lower than that of the first two-dimensional layer, and the growth pressure of the second three-dimensional layer is higher than that of the first two-dimensional layer and is greater than or equal to 200 torr; the growth pressure of the second three-dimensional layer is higher than that of the first two-dimensional layer, and is greater than or equal to 300 torr; the growth temperature of the second three-dimensional layer is at least 10 DEG C lower than that of the first two-dimensional layer, and the V / III ratio of the second three-dimensional layer is lower than that of the first two-dimensional layer and is greater than 200. According to the method, the crystalline quality of epitaxial materials is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer. Background technique [0002] GaN-based group III nitrides are wide bandgap compound semiconductor materials, which have been widely studied and applied in the fields of light emitting diodes (Light Emitting Diode, LED for short), lasers, power devices, and ultraviolet light detectors. [0003] At present, GaN-based LED epitaxial wafers use a patterned sapphire substrate (Patterned Sapphire Substrate, PSS for short) as the substrate material. The existing PSS-based GaN growth method is to grow a low-temperature buffer layer, a three-dimensional GaN layer, dimensional GaN layer. Wherein, the three-dimensional GaN layer is a three-dimensional island-shaped GaN layer, and the two-dimensional GaN layer is a planar GaN layer. [0004] In the process of realizing the prese...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/00H01L33/32H01L33/44
Inventor 董彬忠王江波魏世祯刘榕
Owner HC SEMITEK CORP
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