Radiating-improved semiconductor light-emitting device, manufacturing method of radiating-improved semiconductor light-emitting device and three-dimensional LED light source

Abstract

The invention discloses a radiating-improved semiconductor light-emitting device, a manufacturing method of the radiating-improved semiconductor light-emitting device and a three-dimensional LED light source. The radiating-improved semiconductor light-emitting device, the manufacturing method and the three-dimensional LED light source are used for improving radiating of light-emitting semiconductors, heat generated by chips can be more rapidly transmitted out, and heat accumulated on the chips and the peripheries of the chips can be reduced. The semiconductor light-emitting device comprises at least two LED chips. Two electrodes of each LED chip are located on one face. Patterned conductive carbon nano tube layers are arranged on the faces, with the electrodes, of the LED chips and serve as wires for electrically connecting the two LED chips. Fluorescent powder layers are arranged on the back faces, without the electrodes, of the LED chips. The radiating-improved semiconductor light-emitting device of the structure is quite small in resistance and heat resistance; in addition, conductive carbon nano tubes serve as the wires for connecting the chips in series or in parallel, the heat in the chips can be more efficiently guided out, and the heat accumulated on the surfaces of the chips can be rapidly radiated to the ambient environment through the conductive carbon nano tube layers.

Description

technical field [0001] The invention relates to a packaging technology of an LED device and an LED light-emitting device. Background technique [0002] The LED packaging technology in the prior art is to solidify the LED on the aluminum substrate, and then coat phosphor glue around the LED chip to realize lighting. The LEDs of this technology are surrounded by phosphor colloids, usually epoxy resin or silica gel. This kind of organic material is in direct contact with the LED chip, and its heat transfer performance is poor. The heat emitted by the LED chip cannot be transmitted out in time. The temperature of the LED chip is very different from the temperature on the heat sink on the device. , the internal temperature of the LED chip may exceed 110 degrees. Such a situation causes the chip to work at a high temperature for a long time, reducing its lifespan and performance stability. [0003] Among the existing three-dimensional light sources, there is a kind of LED glass...

AI Technical Summary

Problems solved by technology

Since the LED chip is very small, and each LED chip needs to be solidified on the glass circuit board, the manufacturing process of this LED glass is very complicated, and the glass is a poor conductor of heat. The LED chip is directly fixed on the glass, and the LED The heat emitted by the chip cannot be conducted out in time, which leads to the poor use environment of the LED chip and affects its life and stability

In order to improve the heat dissipation environment of the LED chip of the LED glass, in the prior art, the LED chip is first fixed on the heat sink, and then the heat sink is welded on the glass, so that the heat of the LED chip can be better conducted, but this In this way, the existence of heat sink can be clearly seen on the LED glass, which affects its appearance

In addition, the heat sink is generally metal, which has a load, and it is not easy to fix on the glass circuit board. If silver glue is used to fix it, the thermal resistance and resistance of the silver glue fixing place are very large, which may cause glass overall caloric gain

This improved behavior, due to the heat sink, incurs a material cost

Images