Manufacturing method and structure of three-axis amr magnetic sensor
A technology of a magnetic sensor and a manufacturing method, which is applied in the manufacture/processing of electromagnetic devices, parts and instruments of electromagnetic equipment, etc., can solve the problems of reduced Z-axis magnetic flux and reduced magnetic sensitivity, and achieves low cost and improved Z-axis magnetic properties. Sensitivity, simple process effect
Active Publication Date: 2018-10-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
In the prior art, the magnetic material layer 105 of the fourth AMR magnetic sensor is located on the side of the groove and has a relatively thin thickness, which will lead to a decrease in the induced magnetic flux of the Z axis and a decrease in magnetic sensitivity
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 3
[0050] Such as image 3 Shown is the flow chart of the method of the embodiment of the present invention; Figure 4A to Figure 4C Shown is a cross-sectional structure diagram of the device in each step of the method of the embodiment of the present invention. The three-axis AMR magnetic sensor includes an X-axis AMR magnetic sensor, a Y-axis AMR magnetic sensor, and a Z-axis AMR magnetic sensor. The Z-axis magnetic sensor is composed of a third AMR magnetic sensor and a fourth AMR magnetic sensor. The X-axis The AMR magnetic sensor, the Y-axis AMR magnetic sensor and the third AMR magnetic sensor are all horizontal AMR magnetic sensors, and the fourth AMR magnetic sensor is a vertical AMR magnetic sensor; Figure 4C Among them, the X-axis AMR magnetic sensor and the Y-axis AMR magnetic sensor are shown in the dotted box 9a, the three-axis AMR magnetic sensor is shown in the dotted box 9b, and the fourth AMR magnetic sensor is shown in the dotted box 10 As shown, the manufact...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a manufacturing method of a three-axis AMR magnetic sensor, which includes the steps of: forming a first insulating layer on a substrate; forming a trench in the first insulating layer; forming a second dielectric barrier layer; and sequentially forming a first insulating layer. a magnetic material layer, a first protective layer, a second magnetic material layer and a second protective layer; using an isotropic dry etching process to sequentially etch the second protective layer and the second magnetic material layer so that the second protective layer and The second magnetic material layer only remains on the sidewall surface of the trench. Perform annealing treatment. The first protective layer and the first magnetic material layer are etched using a photolithography process to simultaneously form a horizontal AMR magnetic sensor and a vertical AMR magnetic sensor. The invention also discloses a three-axis AMR magnetic sensor. The invention can improve the Z-axis magnetic sensitivity of the sensor, has simple process and low cost.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for manufacturing a three-axis anisotropic magnetoresistance (Anisotropic Magneto Resistance, AMR) magnetic sensor, and the invention also relates to a three-axis AMR magnetic sensor. Background technique [0002] The magnetoresistance (MR) effect refers to the phenomenon that the resistance of a substance changes with the change of the external magnetic field. According to the size and mechanism of magnetoresistance, it can be divided into normal magnetoresistance effect (OMR), AMR effect, giant magnetoresistance effect (Giant Magneto Resistance, GMR) and super giant magnetoresistance effect (Colossal MagnetoResistance, CMR). [0003] For the AMR effect, below the Curie temperature, the resistivity of ferromagnetic metals will vary with the relative orientation of the current I and the magnetization M, showing anisotropy. Using the AMR effe...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/02G01R33/09H10N50/01H10N50/80
Inventor 赵波
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP