Welding method of aluminum target assembly

Abstract

The invention provides a welding method of an aluminum target assembly. The welding method comprises the steps that an aluminum target and an aluminum back plate are provided; a brazing filler metal wetting layer is formed on the surface, to be welded, of the aluminum target or the surface, to be welded, of the aluminum back plate; the aluminum back plate and the aluminum target with the formed brazing filler metal wetting layer are placed in a vacuum packaging sleeve, and the surface, to be welded, of the aluminum back plate makes contact with the brazing filler metal wetting layer, or, the aluminum target and the aluminum back plate with the formed brazing filler metal wetting layer are placed in the vacuum packaging sleeve, and the surface, to be welded, of the aluminum target makes contact with the brazing filler metal wetting layer; the aluminum target, the brazing filler metal wetting layer and the aluminum back plate are welded together through a hot isostatic pressing technology so as to form the aluminum target assembly; after welding is accomplished, the vacuum packaging sleeve is cooled and removed to obtain the aluminum target assembly. By means of the welding method, welding between the aluminum target and the aluminum back plate can be achieved, the welding efficiency is high, the formed aluminum target assembly is high in welding strength and low in deformation, and the demand of long-term stable production and usage of targets can be met.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a welding method for aluminum target components. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate combined with the target. The back plate plays a supporting role in the target assembly and has the effect of conducting heat. [0003] During the sputtering process, the working environment of the target assembly is relatively harsh. Specifically: the ambient temperature of the target assembly is relatively high, such as 300°C to 600°C; in addition, one side of the target assembly is cooled by cooling water, while the other side is at 10 -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite sides of the target component; moreover, the target component is in a high-voltage electric field and magnetic fiel...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that when the existing welding method is used to weld the aluminum target and the aluminum back plate, the welding efficiency is low, the welding streng

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