Terahertz wave detector

A detector, terahertz technology, applied in the field of terahertz wave detectors, can solve the problems of conjugate matching between antenna and load impedance, receiving antenna and incoming wave polarization cannot be completely matched, and achieve high-sensitivity detection effect

Inactive Publication Date: 2015-05-06
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

In practical applications, the polarization of the receiving antenna and the incoming wave generally cannot be completely matched, and the impedance of the antenna

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0027] The invention uses the gallium nitride high electron mobility transistor as the basic structure, and integrates with the double-slit antenna designed through calculation, so that the terahertz detector can absorb electromagnetic waves of a specific frequency. And the impedance of the antenna matches the impedance of the transistor, which enhances the responsivity of the detection.

[0028] Such as figure 1 and figure 2 As shown, the terahertz wave detector provided by the present invention has a gallium nitride high electron mobility transistor as the basic structure, including a transistor part, a source-drain contact test electrode and a lead part, and a terahertz wave coupling antenna part, wherein: The Hertz...

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Abstract

The invention discloses a terahertz wave detector. A gallium nitride high electron mobility transistor is used as a base structure of the terahertz wave detector. The terahertz wave detector comprises a transistor, a source-drain contact testing electrode and lead part and a terahertz wave coupling antenna; the terahertz wave coupling antenna is the special frequency coupling antenna and is used as a contact electrode to be connected with a nano-structure grid electrode of the transistor; the terahertz wave coupling antenna is positioned at two sides of a source electrode and a drain electrode of the transistor, and contact electrodes of the source electrode and the drain electrode are introduced from two antenna sections; the nano-structure grid electrode of the transistor is connected only with one side of a double-slit opening of the terahertz wave coupling antenna; the source electrode and the drain electrode of the transistor are asymmetrically arranged relative to the terahertz wave coupling antenna. According to the terahertz wave detector, the impedance of a metal electrode of the detector antenna to incident terahertz wave is in match with the input impedance of the grid electrode of the transistor, and therefore, the terahertz wave can be efficiently detected, and the detection sensitivity is high.

Description

technical field [0001] The invention relates to an impedance-matched terahertz wave detector, which can realize efficient detection of terahertz waves at a specific frequency. Background technique [0002] Terahertz wave is an electromagnetic wave with a frequency of 0.1THz-10THz, the wave band is between infrared and millimeter waves, and it occupies an important position in the electromagnetic spectrum. From the perspective of physics, THz waves are in the transition zone from electronics to photonics; from the perspective of frequency domain, the frequency of THz waves covers the characteristic frequency of plasma waves in semiconductors, the rotation and vibration frequencies of organic and biological macromolecules, about 50 % of the cosmic photon frequency and other important frequency ranges; from the application point of view, THz waves have the characteristics of wide frequency band, small energy, strong coherence, and high measurement signal-to-noise ratio, and are...

Claims

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Application Information

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IPC IPC(8): G01J1/42
Inventor 白龙颜伟杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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