Nanometer level film sample tester

Abstract

A disclosed nanometer level film sample tester comprises a reflection mechanism and a temperature control mechanism; the reflection mechanism comprises a polaroid, a first reflector and a second reflector; the temperature control mechanism comprises a heating bench, a refrigeration sheet, a cooling-water block and an infrared temperature-test sensor; the heating bench and the infrared temperature-test sensor are connected with a temperature controller via leads; the infrared temperature-test sensor is disposed on the heating bench via a sensor support; the refrigeration sheet and the cooling-water block are overlapped and disposed below the heating bench; the heating bench is installed on a pedestal via an adjustable heating bench support; and the polaroid, the first reflector and the second reflector are respectively fixedly disposed on corresponding supports via rotation parts. The temperature characteristic is measured by employing the infrared temperature-test sensor being indirectly contacted with a measured article, and the heating bench height, the reflector angle and the polaroid angle are adjustable and randomly adjustable, thereby facilitating adjusting of measured light. The measure effect is good.

Description

[0001] technical field [0002] The invention relates to a device for spectrum detection, in particular to a nanoscale film sample tester. 【Background technique】 [0003] When performing spectral analysis on nanoscale ultra-thin samples, it is necessary to use a grazing angle reflectance spectrometer. The tester in the prior art usually uses a contact temperature measurement method when measuring samples. Since the position where the infrared light is irradiated and the area where the light path passes is not allowed to be blocked by objects, the temperature measurement point cannot be placed in the detection area. The offset of the placement position of the temperature point will cause a large deviation in the temperature measurement, so the general temperature measurement method cannot be applied to the reflection technology. For general heating devices and temperature measuring devices, the temperature measurement point is located inside the hot stage, and the sample fi...

AI Technical Summary

Problems solved by technology

The tester in the prior art usually uses a contact temperature measurement method when measuring samples. Since the position where the infrared light is irradiated and the area where the light path passes is not allowed to be blocked by objects, the temperature measurement point cannot be placed in the detection area. The deviation of the placement position of the temperature point will cause a large deviation in the temperature measurement, so the general temperature measurement method cannot be applied to the reflection technology

For general heating devices and temperature measuring devices, the temperature measurement point is located inside the hot stage, and the sample film is close to the surface of the hot stage during the test. The temperature of the hot stage is basically the temperature of the sample, but for the reflective infrared spectroscopy device, Because the substrate belongs to glass with low thermal conductivity, there must be a temperature difference between the upper and lower surfaces of the substrate. Therefore, the surface temperature has a great relationship with the selection of temperature measurement points and temperature measurement methods. Therefore, the temperature of the sample cannot be accurately measured in the prior art. It is impossible to accurately control the temperature

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