Flexible active strain or pressure sensor structure and preparation method

A pressure sensor, flexible piezoelectric technology, applied in the manufacture of semiconductor/solid-state devices, measurement of properties of piezoelectric devices, semiconductor devices, etc., can solve the constraints of strain or pressure sensor sensitivity, low carrier mobility, It is difficult to obtain high-performance device characteristics, etc., to achieve the effects of convenient large-area and large-scale applications, excellent device characteristics, and high sensitivity

Active Publication Date: 2015-05-13
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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Problems solved by technology

However, organic transistors are limited by the low carrier mobility of organic semiconductor materials, and it is difficul

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  • Flexible active strain or pressure sensor structure and preparation method
  • Flexible active strain or pressure sensor structure and preparation method
  • Flexible active strain or pressure sensor structure and preparation method

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Embodiment Construction

[0023] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0024] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation, transparency and simplification are not included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0025] In the following specific embodiments of the present invention, first please refer to figure 1 , figure 1 It is a three-dimensional schematic diagram of a flexible active strain or pressure sensor structure in a preferred embodiment of the present invention. Such as figure 1 As shown, the flexible active strain or pressure...

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Abstract

The invention discloses a flexible active strain or pressure sensor structure and a preparation method. A carbon nano-tube transistor serves as a flexible active field effect transistor, flexible piezoelectric thin film material is used for preparing a piezoelectric strain or pressure sensor unit, and process integration is carried out on a piezoelectric sensor and the grid electrode of the active field effect transistor so as to amplify and output piezoelectric sensing signals through the carbon nano-tube field effect transistor. The flexible active strain or pressure sensor structure and the preparation method guarantee the high sensitivity of the piezoelectric sensor when realizing the active control for the flexible strain or pressure sensor; the flexible active strain or pressure sensor structure and the preparation method provide a very convenient implementation method for the large-scale application of the sensor.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, and more specifically, to a flexible active strain or pressure sensor structure and a preparation method. Background technique [0002] In recent years, with the rapid development of smart wearable products, flexible sensors have gradually become one of the hot topics explored by researchers. Among them, flexible strain or pressure sensors are attracting more and more attention, which can be potentially applied to construct artificial electronic skin, and have a very broad market prospect in the field of health care in the future. In addition, flexible pressure sensors are also core components in flexible touch-screen displays and intelligent robot applications, all of which indicate the potential application value of flexible strain or pressure sensors. [0003] At present, research on flexible strain or pressure sensors can be based on a variety of workin...

Claims

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Application Information

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IPC IPC(8): G01B7/16G01L1/16H01L29/78H01L29/10H01L21/336
Inventor 郭奥胡少坚周伟
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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