Preparation method of flexible super-hydrophobic and super-oleophobic structure

A super-hydrophobic, super-oleophobic, flexible technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of difficult process, complicated process, and non-flexible structure, etc., and achieve low process cost , The process is simple and the effect of wide application value

Inactive Publication Date: 2015-05-20
HUAZHONG UNIV OF SCI & TECH
View PDF6 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] while preparing figure 1 The structure shown in (c) has a very complicated process in the prior art, and requires the use of photolithography, inductively coupled plasma etching, wet silicon etching, thermal silicon oxide coating and other processes, and the equipment used is very expensive. The cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of flexible super-hydrophobic and super-oleophobic structure
  • Preparation method of flexible super-hydrophobic and super-oleophobic structure
  • Preparation method of flexible super-hydrophobic and super-oleophobic structure

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0035] Example one

[0036] (1) Exposing the bottom layer photoresist: Spin-coating a layer of SU-82000 photoresist on the substrate, with a thickness of 5μm, and expose without a mask;

[0037] (2) The first exposure of the structural layer photoresist: a layer of SU-82000 photoresist is spin-coated on the SU-82000 photoresist after exposure in step (1), the thickness is 10μm, and the exposure is carried out; Such as image 3 In the array pattern mask shown, the diameter of the inner circle is 3 μm, the diameter of the outermost ring of the outer ring is 10 μm, the width of the ring is 0.5 μm, and the center distance between the array patterns is 15 μm;

[0038] (3) Second exposure of structural layer photoresist: use the transparent circular array mask corresponding to step (2) for over-etching exposure, and use a small exposure dose to make only the surface layer of 1μm photoresist The cross-linking reaction will not be developed; the light-transmitting circle has the same distri...

Example Embodiment

[0042] Example two

[0043] (1) Exposing the bottom layer photoresist: spin-coating a layer of NR26-25000P on the substrate with a thickness of 10μm, and exposure without a mask;

[0044] (2) The first exposure of structural layer photoresist: spin-coating a layer of SU-8GM 1070 on the SU-8GM 1070 exposed in step (1) with a thickness of 12μm for exposure; use such as image 3 In the array pattern mask shown, the inner circle has a diameter of 6 μm, the outer circle has a diameter of 10 μm, the width of the circle is 0.8 μm, and the center distance between the array patterns is 30 μm;

[0045] (3) The second exposure of the structural layer photoresist: use the transparent circular array mask corresponding to step (2) for over-etching exposure, using a small exposure dose, so that only the surface layer of 1.5μm photolithography The cross-linking reaction of the glue will not be developed; the light-transmitting circle has the same distribution as the mask pattern used in step (2), an...

Example Embodiment

[0049] Example three

[0050] (1) Exposing the bottom layer photoresist: spin-coating a layer of NR26-25000P photoresist on the substrate with a thickness of 20μm, and exposure without a mask;

[0051] (2) The first exposure of the structural layer photoresist: a layer of NR26-25000P photoresist is spin-coated on the NR26-25000P photoresist after exposure in step (1), the thickness is 18μm, for exposure; Such as image 3 In the array pattern mask shown, the inner circle has a diameter of 9 μm, the outer circle has a diameter of 20 μm, the width of the circle is 1 μm, and the center distance between the array patterns is 42 μm;

[0052] (3) Second exposure of structural layer photoresist: use the transparent circular array mask corresponding to step (2) for over-etching exposure, using a small exposure dose, so that only the surface layer of 2μm photoresist The cross-linking reaction will not be developed; the light-transmitting circle has the same distribution as the mask pattern us...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Center distanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a flexible super-hydrophobic and super-oleophobic structure. The preparation method comprises the following steps of: (1) manufacturing a bottom layer of the flexible super-hydrophobic and super-oleophobic structure: rotatably coating a layer of negative photoresist on a substrate and carrying out exposure without using a mask; (2) rotatably coating a layer of negative photoresist on the negative photoresist after exposure of the step (1), and carrying out exposure by utilizing an array graphic mask; (3) carrying out second-time exposure on the photoresist of a structural layer: adopting the mask corresponding to the step (2) to carry out etching exposure; (4) developing: carrying out development on the structure after exposure in the step; (5) plating a protective layer film: forming a layer of protective film on the surface of the structure obtained in the step (4); (6) peeling: peeling the structure obtained after treatment of the step (5) from the substrate and obtaining the flexible super-hydrophobic and super-oleophobic structure. The preparation method disclosed by the invention is simple in process and low in cost, and has great promotion action for popularization and application of the flexible super-hydrophobic and super-oleophobic structure.

Description

technical field [0001] The invention belongs to the field of micro-nano manufacturing, and more specifically relates to a preparation process of a flexible superhydrophobic and superoleophobic structure. Background technique [0002] Superhydrophobic materials are one of the research hotspots in recent years, and the structures and materials for preparing superhydrophobic surfaces emerge in endlessly. The principle of superhydrophobic materials is mainly to make the liquid in the Cassie-Baxter state on the surface of the microstructure, that is, the liquid surface will be held by the surface microstructure and air without completely touching the solid surface, such as figure 1 As shown, the liquid droplets are suspended on the solid surface microstructure. The surface in the Cassie-Baxter state has superhydrophobic properties, and the rolling angle is small, and the droplets can easily roll off the surface, thus having a self-cleaning effect. Existing superhydrophobic surf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81C1/00
Inventor 廖广兰谭先华史铁林独莉刘智勇吴悠妮
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap