Porous metal membrane produced by means of noble gas ion bombardment
A technology of porous metal and inert gas, applied in the direction of membrane, membrane technology, electrical components, etc., can solve the problems of low flow rate, complex structure, high component sensitivity, etc., and achieve the effect of high temperature resistance
Inactive Publication Date: 2015-05-20
I3 MEMBRANE +1
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Problems solved by technology
Disadvantages of this type of membrane are lack of flexibility, high component sensitivity, and low flow rates
Like in conventional polymer membranes, ceramic membranes have a thin separation layer which lies on top of the support layer, leading to the disadvantages described
As disclosed in DE 10 208 280 A1, trying to make flexible structures is very complicated because covering the ceramic material on the fleece is also very complicated
Method used
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[0035] figure 1 Ion metering shown as 1.5E 15 / cm on both sides 2 Scanning electron micrographs of 5 μm thick stainless steel foil after argon ion implantation and atomization by sputtering. The inductively coupled plasma was generated at a frequency of 13.56 MHz by a water-cooled quartz antenna inside the vacuum chamber, which was previously filled with 0.5 Pa of argon. The power coupled into the antenna is 400W. The pulse voltage as plasma immersion ion implantation was set to minus 25 kV with a pulse duration of 10 μs and a frequency of 2 kHz. Inject 1.5E 15 / cm 2 ion dose. The surface temperature of the stainless steel foil is controlled by an infrared camera. The temperature was set at 580°C. Subsequently, the accelerating voltage was lowered, and the foil was sputtered at an accelerating voltage of 2 kV. The pore size, as measured and indicated by scanning electron micrographs, is from 0.4 μm to 1 μm.
[0036] figure 2 show figure 1 Scanning electron micrograph ...
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Abstract
The present invention relates to a process for producing a porous metal membrane (pore size 10 nm and 1 µm), a metal membrane of this type, the use of the metal membrane and also corresponding filter modules. The porosity should be so high that it is significantly superior to the ion track process. Furthermore, the use of chemicals should be dispensed with where possible. The Dice is 1-20 microns. According to the invention, the plasma immersion ion implantation process is utilized by bombarding a very thin metal foil with noble gas ions accelerated by means of a first accelerating voltage, in particular from both sides. The ion current is selected so that supersaturation occurs in the metal foil. Pores, in particular under the metal surface, are then formed by bubble segregation after supersaturation. Opening of the pores formed under the metal surface by ion implantation is effected by atomization of the surface by means of bombardment with noble gas ions using a second accelerating voltage which is lower than the first accelerating voltage.
Description
technical field [0001] The invention relates to a method for producing a porous metal membrane, such a metal membrane, the use of the metal membrane and its corresponding filter module. Background technique [0002] Polymer films have been known for a long time. They are processed as flat or hollow fiber membranes with more or less high porosity. The most widely used polymer membranes are polysulfone, polyether, fiber and polyamide. Membrane structures can be divided into symmetric and asymmetric structures. Asymmetric membranes are produced by the so-called phase inversion process. At the same time, initially homogeneous polymer solutions are prone to phase separation in the liquid or gaseous state due to temperature changes or contact with non-solvents. The non-solvent is removed after phase separation and porous structure formation. For example, the production method described in US Patent 4,629,563 (1986) or US Patent 4,900,449 (1990). The optimization of the produ...
Claims
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IPC IPC(8): B01D67/00B01D71/02H01M50/431
CPCB01D67/0053B01D71/022B01D2323/35H01M8/0289Y02E60/50Y02E60/10H01M50/431B01D71/0221B01D67/006
Inventor 斯蒂芬·布林克·赛福斯安德里亚斯·科利奇阿纳托利·罗戈津
Owner I3 MEMBRANE